In this work, a theoretical study of the electronic and the optical properties of a new family of strain-free GaAs/AlGaAs quantum dots (QDs) obtained by AlGaAs nanohole filling is presented. The considered model consists of solving the three-dimensional effective-mass Schrödinger equation, thus providing a complete description of the neutral and charged complex excitons’ fine structure. The QD size effect on carrier confinement energies, wave functions, and s-p splitting is studied. The direct Coulomb interaction impact on the calculated s and p states’ transition energies is investigated. The behaviour of the binding energy of neutral and charged excitons (X⁻ and X⁺) and biexciton XX versus QD height is studied. The addition of the correlation effect allows to explain the nature of biexcitons often observed experimentally.

中文翻译：

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纳米孔填充生长的GaAs/AlGaAs量子点激子配合物的理论研究

在这项工作中，提出了通过 AlGaAs 纳米孔填充获得的新系列无应变 GaAs/AlGaAs 量子点 (QD) 的电子和光学特性的理论研究。所考虑的模型包括求解三维有效质量薛定谔方程，从而提供对中性和带电复合激子精细结构的完整描述。研究了量子点尺寸对载流子约束能、波函数和s - p分裂的影响。研究了库仑相互作用对计算的s和p态跃迁能的直接影响。中性和带电激子的结合能行为（X ^-和X ⁺) 和双激子XX与 QD 高度的关系进行了研究。相关效应的加入可以解释经常在实验中观察到的双激子的性质。