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Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing
Giant ( IF 5.4 ) Pub Date : 2021-08-30 , DOI: 10.1016/j.giant.2021.100078
Tao Wen , Bo Ni , Yuchu Liu , Wei Zhang , Zi-Hao Guo , Yi-Chien Lee , Rong-Ming Ho , Stephen Z.D. Cheng

Utilizing the controlled self-assembling of a giant surfactant, a bottom-up method for constructing line gratings with sub-10 nm resolution has been developed. Via a simple solvent vapor annealing procedure, the giant surfactant comprised of an oligomeric silsesquioxane (DPOSS) and polystyrene (PS) tail (i.e., DPOSS-PS) has been precisely self-assembled into perpendicularly oriented lamellae structures. A follow-up thermal annealing further significantly promotes the long-range ordering, giving rise to highly oriented and defect-free sub-10 nm line patterns (up to areas of several µm2). The solvent evaporation and thermal annealing process, together with the strong segregation strength (χN) of DPOSS-PS, play crucial roles in the self-orientation and width-reduction of the line patterns. This simple processing of the easy-accessed giant surfactants results in a facile and more economic approach for large-scale nano-sized line grating fabrication.



中文翻译:

通过顺序退火控制自组装实现大面积无缺陷纳米线图案

利用巨型表面活性剂的受控自组装,开发了一种自下而上的方法来构建具有亚 10 nm 分辨率的线光栅。通过简单的溶剂蒸汽退火程序,由低聚倍半硅氧烷 (DPOSS) 和聚苯乙烯 (PS) 尾部(,DPOSS-PS)组成的巨大表面活性剂已精确地自组装成垂直取向的薄片结构。后续的热退火进一步显着促进了长程排序,从而产生了高度定向和无缺陷的亚 10 nm 线图案(高达几个 µm 2 的区域)。溶剂蒸发和热退火过程,以及强大的偏析强度(χN) 的 DPOSS-PS,在线条图案的自定向和宽度减小方面起着至关重要的作用。这种易于获得的巨型表面活性剂的简单加工为大规模纳米线光栅制造提供了一种简便且更经济的方法。

更新日期:2021-09-06
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