Carbon nanotube field effect transistors (CNTFETs) are the best alternative option for the metal oxide semiconductor field effect transistor (MOSFET) in the ultra-deep submicron (ultra-DSM) regime. CNTFET has numerous benefits such as lower off-state current, high current density, low bias potential and better transport property as compared to MOSFET. A rolled graphene sheet-based cylindrical tube is constructed in the channel region of the CNTFET structure. In this paper, an improved domino logic (IDL) configuration is proposed for domino logic circuits to improve the different performance metrics. An extensive comparative simulation analysis is provided for the different performance metrics for different circuits to verify the novelty of the proposed IDL approach. The IDL approach saves the leakage power dissipation by 95.61% and enhances the speed by 87.10% for the 4-bit full adder circuit as compared to the best reported available domino method. The effects of the number of carbon nanotubes (CNTs), temperature, and power supply voltage variations are estimated for leakage power dissipation for the 16-input OR (OR16) gate. The reliability of different performance metrics for different circuit is calculated in terms of uncertainty by running the Monte Carlo simulations for 500 samples. Stanford University’s 32nm CNTFET model is applied for circuit simulations.

中文翻译：

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用于低功率应用的基于 CNTFET 电路的宽扇入 Domino 逻辑

碳纳米管场效应晶体管 (CNTFET) 是超深亚微米 (ultra-DSM) 领域中金属氧化物半导体场效应晶体管 (MOSFET) 的最佳替代选择。与 MOSFET 相比，CNTFET 具有许多优点，例如更低的截止电流、高电流密度、低偏置电势和更好的传输性能。在 CNTFET 结构的沟道区域中构建了基于轧制石墨烯片的圆柱形管。在本文中，为多米诺逻辑电路提出了一种改进的多米诺逻辑（IDL）配置，以提高不同的性能指标。为不同电路的不同性能指标提供了广泛的比较仿真分析，以验证所提出的 IDL 方法的新颖性。IDL 方法将泄漏功耗降低了 95。与报告的最佳多米诺骨牌方法相比，4 位全加器电路的速度提高了 61%，速度提高了 87.10%。估计碳纳米管 (CNT) 的数量、温度和电源电压变化对 16 输入或 (OR16) 门的泄漏功率耗散的影响。通过运行 500 个样本的蒙特卡罗模拟，根据不确定性计算不同电路的不同性能指标的可靠性。斯坦福大学 32 通过运行 500 个样本的蒙特卡罗模拟，根据不确定性计算不同电路的不同性能指标的可靠性。斯坦福大学 32 通过运行 500 个样本的蒙特卡罗模拟，根据不确定性计算不同电路的不同性能指标的可靠性。斯坦福大学 32nm CNTFET 模型用于电路仿真。