In this study, an aluminum indium gallium nitride (AlInGaN)/aluminum indium nitride (AlInN)/aluminum indium gallium nitride (AlInGaN) tunnel electron blocking layer (EBL) is introduced instead of traditional EBL in aluminum gallium nitride (AlGaN)-based deep UV light-emitting diodes (DUV LEDs). The simulation results reveal that the internal quantum efficiency (IQE) and radiative recombination rate are impressively improved in the proposed DUV LED as compared to the conventional LED. This significant improvement is assigned to the uniform recombination of carriers in the active zone due to the reduction of lattice mismatching, which is the main cause of reducing the induced piezoelectric polarization field. Additionally, the tunnel EBL in our proposed structure also assists the hole transport into the active zone. As a result, not only is IQE improved, but also the efficiency droop is reduced significantly in our proposed device. This is attributed to the enhanced recombination of electron-hole pairs in the active region.

在这项研究中，在基于氮化铝镓 (AlGaN) 的深孔中引入了铝铟镓 (AlInGaN)/氮化铝铟 (AlInN)/氮化铝铟镓 (AlInGaN) 隧道电子阻挡层 (EBL) 代替传统的 EBL。紫外线发光二极管（DUV LED）。模拟结果表明，与传统 LED 相比，所提出的 DUV LED 的内部量子效率 (IQE) 和辐射复合率显着提高。这种显着的改进归因于由于晶格失配的减少，有源区中载流子的均匀复合，这是减少感应压电极化场的主要原因。此外，我们提出的结构中的隧道 EBL 也有助于空穴传输到活性区。其结果，在我们提出的设备中，不仅 IQE 得到改善，而且效率下降也显着降低。这归因于有源区中电子-空穴对的增强复合。