Semiconducting single-walled carbon nanotube (s-SWCNT) films require high-quality preparation and optimization for use in carbon-based electronic devices. Tremendous progress has been made in s-SWCNTs sorting technology with conjugated polymers to obtain high-purity s-SWCNT films. However, one drawback of this technology is residual polymer wrapping on s-SWCNT surfaces. These residual polymers have poor conductivity, impeding the charge transport between the nanotube-electrode and the nanotube-nanotube. To address this issue, a rapid annealing and cooling method was developed for cleaning the s-SWCNT films, which can thoroughly remove the wrapped polymers from the surfaces of s-SWCNTs, effectively reducing the contact resistance between the nanotube-metal electrode and the nanotube-nanotube. Our results show that thin-film transistors made of cleaned s-SWCNTs exhibited improved performance when compared with pristine s-SWCNT films rinsed with an organic solvent. The contact resistance between the s-SWCNTs and the electrode was reduced by 700%, while the on–state current density of the CNT-TFTs increased by nearly 600%. These results thus demonstrated the effectiveness of our developed method for removing polymers from the surfaces of s-SWCNTs, which is essential for the further development of carbon nanotube electronic devices and circuits.

半导体单壁碳纳米管 (s-SWCNT) 薄膜需要高质量的制备和优化才能用于碳基电子设备。s-SWCNTs 与共轭聚合物分选技术在获得高纯度 s-SWCNT 薄膜方面取得了巨大进展。然而，该技术的一个缺点是残留的聚合物包裹在 s-SWCNT 表面上。这些残留的聚合物具有较差的导电性，阻碍了纳米管电极和纳米管纳米管之间的电荷传输。为了解决这个问题，开发了一种快速退火和冷却方法来清洁 s-SWCNT 薄膜，该方法可以彻底去除 s-SWCNTs 表面包裹的聚合物，有效降低纳米管-金属电极与纳米管之间的接触电阻。 -纳米管。我们的结果表明，与用有机溶剂冲洗的原始 s-SWCNT 薄膜相比，由清洁的 s-SWCNT 制成的薄膜晶体管表现出更高的性能。s-SWCNTs 和电极之间的接触电阻降低了 700%，而 CNT-TFTs 的通态电流密度增加了近 600%。因此，这些结果证明了我们开发的从 s-SWCNT 表面去除聚合物的方法的有效性，这对于碳纳米管电子器件和电路的进一步发展至关重要。