The “two-step” growth technique has been used to grow atomically uniform Ag films on $7\times 7$ Si(111) and $8\times 8 \beta {\text{-Si}}_3{\text{N}}_4$(0001)/Si(111) surfaces. Angle-resolved photoemission spectroscopy reveals the formation of $sp$ quantum well states in the Ag films with distinct properties in the two cases. It is shown that the valence electrons in silver can be confined in the fundamental gap of a less than 1-nm-thin nitride layer, effectively decoupling the Ag and Si states.

中文翻译：

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通过观察量子阱态，亚纳米薄绝缘体层对 Ag/Si(111) 界面的影响

“两步”生长技术已被用于在表面上生长原子均匀的 Ag 薄膜 $7\times 7$ 硅（111）和 $8\times 8 \beta {\text{-Si}}_3{\text{N}}_4$(0001)/Si(111) 表面。角分辨光电子能谱揭示了$秒磷$在两种情况下具有不同性质的 Ag 薄膜中的量子阱态。结果表明，银中的价电子可以被限制在小于 1 nm 薄氮化物层的基本间隙中，有效地解耦 Ag 和 Si 状态。