In this work, we have theoretically investigated the indium segregation and In/Ga intermixing effects in lens-shaped In_xGa_1-xAs/GaAs quantum dots coupled to their wetting layer. In the wetting layer, the segregation phenomenon is described by Muraki's et al. model. However, the radial and vertical indium distributions resulting from In/Ga intermixing effect in the quantum dot were taken into account assuming a three-dimensional Gaussian distribution. The results obtained via the Finite Difference Method clearly showed that the introduction of such effects is of a great importance to match the photoluminescence data. The obtained results also indicated that the indium segregation in the wetting layer and the inter-diffusion inside the quantum dots dramatically affected the linear, nonlinear and total absorption coefficients of the strained nanostructure under investigation. Besides, the obtained results showed that the total absorption coefficient achieved an optimum value with a red shift of the resonant energy upon increasing the pressure and a blue shift when increasing the temperature.

在这项工作中，我们从理论上研究了透镜状 In _x Ga _{1-x 中}的铟偏析和 In/Ga 混合效应。As/GaAs 量子点耦合到它们的润湿层。在润湿层中，Muraki 等人描述了偏析现象。模型。然而，假设三维高斯分布，考虑了由量子点中的 In/Ga 混合效应导致的径向和垂直铟分布。通过有限差分法获得的结果清楚地表明，引入这种效应对于匹配光致发光数据非常重要。所得结果还表明，润湿层中的铟偏析和量子点内部的相互扩散显着影响了所研究的应变纳米结构的线性、非线性和总吸收系数。除了，