Two dimensional (2D) ferroelectric heterostructures with tunable electronic properties show many novel physical properties, which have gradually aroused great interest. Herein, based on first-principle calculations, we present a comprehensive research on the electronic properties of InSe/In₂Se₃ ferroelectric van der Waals heterostructures with and without strains. We have obtained the most stable stack configuration of the heterostructure. Under a certain strain, the pure electric field can control the change of semiconductor types and the transition between direct and indirect band gap. In addition, we found that the built-in electric field served by ferroelectric polarization makes the InSe/In₂Se₃ heterostructure have higher light absorption than monolayer InSe and In₂Se₃. Our results show that InSe/In₂Se₃ heterostructure may have great potential applications in electronic and optoelectronic devices or other fields.

具有可调电子特性的二维（2D）铁电异质结构显示出许多新颖的物理特性，逐渐引起了人们的极大兴趣。在此，基于第一性原理计算，我们对有应变和无应变的 InSe/In ₂ Se ₃铁电范德华异质结构的电子特性进行了综合研究。我们已经获得了最稳定的异质结构堆叠配置。在一定应变下，纯电场可以控制半导体类型的变化以及直接和间接带隙之间的跃迁。此外，我们发现铁电极化所提供的内置电场使 InSe/In ₂ Se ₃异质结构比单层InSe和In ₂ Se ₃具有更高的光吸收。我们的研究结果表明，InSe/In ₂ Se ₃异质结构在电子和光电器件或其他领域可能具有巨大的应用潜力。