We fabricated BiVO₄/CuO heterojunction photoelectrodes by depositing BiVO₄ capping layers on CuO photoelectrodes and investigated the photocurrent density and photostability of the photoelectrodes according to the number of BiVO₄ depositions using the spin coating method. The morphological, structural, optical, electrical and photoelectrochemical properties of the BiVO₄/CuO photoelectrode were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV–visible spectroscopy, electrochemical impedance spectroscopy, and three-electrode potentiostat/galvanostat equipment. XRD and XPS results showed that the crystallinities and binding energies of BiVO₄/CuO photoelectrodes were affected by BiVO₄ compared to the CuO photoelectrode. In particular, XPS measurements showed that the Cu 2p_3/2 peak binding energies of the CuO photoelectrode and BiVO₄/CuO photoelectrodes with poor photostabilities shifted to those of Cu₂O, showing self-reduction from CuO to Cu₂O, after photostability measurement. In contrast, BiVO₄/CuO photoelectrodes with proper BiVO₄ deposition cycles showed good photostabilities without self-reduction. The BiVO₄/CuO photoelectrode with 4 BiVO₄ deposition cycles showed a high photostability of 76.2% via photocorrosion suppression, which is a much improved result compared to the single CuO photoelectrode with a photostability of 13.1%. However, the photocurrent density of −1.77 mA/cm² (vs. SCE at −0.55 V) is still low, and further study is necessary.

我们通过在 CuO 光电极上沉积 BiVO ₄覆盖层来制造 BiVO ₄ /CuO 异质结光电极，并使用旋涂方法根据 BiVO ₄沉积的数量研究光电极的光电流密度和光稳定性。形态中，BiVO的结构，光学，电学和光电化学性质₄ / CuO的光电极使用场致发射扫描电子显微镜进行了研究，X射线衍射（XRD），X-射线光电子能谱（XPS），紫外可见光谱，电化学阻抗谱和三电极恒电位仪/恒电流仪设备。XRD 和 XPS 结果表明 BiVO ₄的结晶度和结合能与CuO光电极相比，/CuO光电极受BiVO ₄影响。特别是，XPS 测量表明，光稳定性差的 CuO 光电极和 BiVO ₄ /CuO 光电极的 Cu 2p _3/2峰值结合能转移到 Cu ₂ O 的结合能，表现出在光稳定性后从 CuO 自我还原为 Cu ₂ O测量。相比之下，具有适当 BiVO ₄沉积循环的BiVO ₄ /CuO 光电极显示出良好的光稳定性而没有自还原。具有 4 BiVO ₄的 BiVO ₄ /CuO 光电极沉积循环通过光腐蚀抑制显示出 76.2% 的高光稳定性，与光稳定性为 13.1% 的单个 CuO 光电极相比，这是一个大大改善的结果。然而，-1.77 mA/cm ² (vs. SCE at -0.55 V)的光电流密度仍然很低，需要进一步研究。