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Fabrication and Transport Characteristics of YBCO Step-Edge-Based Josephson Junction on Revived MgO Substrate
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-08-28 , DOI: 10.1002/pssb.202100267
Mamta Dahiya 1 , Satyendra Prakash Pal 2, 3 , Neeraj Khare 1, 2
Affiliation  

Herein, the combined impact of ion beam milling and postannealing treatment on the transport properties of deposited YBa2Cu3Ox (YBCO) thin film and fabricated step-edge Josephson junction (JJ) on degraded MgO (100) substrates are investigated, and the obtained results of the YBCO thin film and fabricated step-edge JJ on treated MgO (100) substrate are compared with the YBCO film and step-edge junction on a fresh MgO substrate. Structural study reveals the formation of c-axis-oriented YBCO thin film on revived MgO substrate which is very much comparable with the YBCO film on fresh substrate. Atomic force microscopy (AFM) technique is used to confirm the step heights of the fabricated step-edges on fresh, revived, and degraded MgO substrates. After the treatment, the surface roughness of MgO substrate has reduced from 56 to 1.06 nm which is comparable with the fresh MgO (100) substrate. The acquired values of critical temperatures for as-deposited YBCO thin film on fresh and revived MgO substrates are 89.1 and 88.3 K, respectively, whereas these values are 85.8 and 85.7 K for the fabricated step-edge junction microbridges on these deposited thin films. For both the fabricated step-edge junction on the revived and fresh MgO substrate, the superconductor–normal metal–superconductor-type JJ is confirmed.

中文翻译:

基于 YBCO 阶梯边缘的约瑟夫森结在再生 MgO 衬底上的制备和传输特性

在此,研究了离子束铣削和后退火处理对在降解的 MgO (100) 衬底上沉积的 YBa 2 Cu 3 O x (YBCO) 薄膜和制造的阶梯边缘约瑟夫森结 (JJ)传输性能的综合影响,以及将在处理过的 MgO (100) 衬底上获得的 YBCO 薄膜和制造的阶梯边缘 JJ 的结果与在新的 MgO 衬底上的 YBCO 薄膜和阶梯边缘结进行比较。结构研究揭示了c的形成再生的 MgO 衬底上的 轴取向 YBCO 薄膜与新鲜衬底上的 YBCO 薄膜非常相似。原子力显微镜 (AFM) 技术用于确认在新鲜、复原和降解的 MgO 基板上制造的台阶边缘的台阶高度。处理后,MgO 衬底的表面粗糙度从 56 nm 降低到 1.06 nm,与新鲜的 MgO (100) 衬底相当。在新鲜和恢复的 MgO 基板上沉积的 YBCO 薄膜的临界温度值分别为 89.1 和 88.3 K,而这些沉积薄膜上制造的阶梯边缘结微桥的临界温度值分别为 85.8 和 85.7 K。对于在恢复的和新鲜的 MgO 衬底上制造的阶梯边缘结,超导体 - 普通金属 - 超导体型 JJ 得到证实。
更新日期:2021-08-28
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