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The Degradation Mechanism of Mg2Si during Exploitation at High Temperature
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-08-28 , DOI: 10.1002/pssb.202100425 Yangfang Liao 1 , Jing Xie 1 , Bing Lv 1 , Dongni Wu 1 , Qingquan Xiao 2 , Quan Xie 2
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-08-28 , DOI: 10.1002/pssb.202100425 Yangfang Liao 1 , Jing Xie 1 , Bing Lv 1 , Dongni Wu 1 , Qingquan Xiao 2 , Quan Xie 2
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Oxidized Mg2Si films are annealed in low vacuum at various annealing temperature, and the degradation mechanism of Mg2Si during exploitation at high temperature is investigated. The crystal structure, surface morphology, depth profile, Raman scattering, and electrical properties are measured by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Hall effect system, respectively. XRD results show that MgO exists apparently in Mg2Si films, and as the annealing temperature increases, the content of MgO increases. The surfaces of films present distinct hexagon structures. The results of depth profiles show that the oxygen content decreases gradually from the surface to the subsurface. Raman spectroscopy analysis suggests that as the annealing temperature increases, the intensity of MgO peak enhances gradually. Hall measurement results indicate that the carrier concentration and mobility decrease significantly with the increase in annealing temperature. The films show n-type at lower annealing temperature, while they present p-type at higher annealing temperature, which indicates obvious conversions from n- to p-type.
中文翻译：
Mg2Si在高温开采过程中的降解机制
将氧化后的Mg 2 Si薄膜在不同退火温度下进行低真空退火，研究了Mg 2 Si在高温开采过程中的降解机理。通过 X 射线衍射 (XRD)、场发射扫描电子显微镜 (FESEM)、X 射线光电子能谱 (XPS)、拉曼光谱和霍尔测量晶体结构、表面形貌、深度轮廓、拉曼散射和电性能效果系统，分别。XRD结果表明MgO明显存在于Mg 2Si薄膜，随着退火温度的升高，MgO的含量增加。薄膜表面呈现不同的六边形结构。深度剖面结果表明，氧含量从地表到地表下逐渐降低。拉曼光谱分析表明，随着退火温度的升高，MgO 峰的强度逐渐增强。霍尔测量结果表明，随着退火温度的升高，载流子浓度和迁移率显着降低。薄膜在较低的退火温度下呈现 n 型，而在较高的退火温度下呈现 p 型，这表明从 n 型到 p 型的明显转变。
更新日期：2021-08-28
中文翻译：
Mg2Si在高温开采过程中的降解机制
将氧化后的Mg 2 Si薄膜在不同退火温度下进行低真空退火，研究了Mg 2 Si在高温开采过程中的降解机理。通过 X 射线衍射 (XRD)、场发射扫描电子显微镜 (FESEM)、X 射线光电子能谱 (XPS)、拉曼光谱和霍尔测量晶体结构、表面形貌、深度轮廓、拉曼散射和电性能效果系统，分别。XRD结果表明MgO明显存在于Mg 2Si薄膜，随着退火温度的升高，MgO的含量增加。薄膜表面呈现不同的六边形结构。深度剖面结果表明，氧含量从地表到地表下逐渐降低。拉曼光谱分析表明，随着退火温度的升高，MgO 峰的强度逐渐增强。霍尔测量结果表明，随着退火温度的升高，载流子浓度和迁移率显着降低。薄膜在较低的退火温度下呈现 n 型，而在较高的退火温度下呈现 p 型，这表明从 n 型到 p 型的明显转变。
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