This study investigates packaging effects on the sensing performance of resistance temperature detectors (RTDs) on an AlN substrate of a wafer heater. The study utilizes a solder packaged RTD (PRTD1) as a conventional case and a thermal paste immersed RTD (PRTD2) as a traction free case with the AlN substrate. A high precision measurement study and a robust FEA thermal-structural study are conducted to explore packaging effects. The measurement finds that sensed results by the PRTD1 are even 2.5 °C or 0.9 Ω higher than those of the PRTD2. The thermally-induced strain in the Pt thin-film of the PRTD1 may explain this difference. The FEA study determines that the non-negligible axial strain of 0.002 occurs in the Pt thin-film with the heated surface of the AlN substrate isothermal at 250 °C. This study demonstrates that the straightforward analytical method may reasonably predict the shift of the electrical resistance, induced by the thermally-induced strain, of the RTD. The discrepancy is found to be smaller than 10 % compared with the sophisticated measurement.

本研究调查了封装对晶圆加热器 AlN 基板上电阻温度检测器 (RTD) 传感性能的影响。该研究使用焊料封装的 RTD (PRTD1) 作为传统外壳，将热膏浸入式 RTD (PRTD2) 作为具有 AlN 基板的无牵引外壳。进行了高精度测量研究和强大的 FEA 热结构研究，以探索包装效果。测量发现，PRTD1 的感应结果甚至比 PRTD2 的感应结果高 2.5 °C 或 0.9 Ω。PRTD1 的 Pt 薄膜中的热致应变可以解释这种差异。FEA 研究确定 0.002 的不可忽略的轴向应变发生在 Pt 薄膜中，AlN 衬底的加热表面在 250 °C 下等温。这项研究表明，直接的分析方法可以合理地预测由热致应变引起的 RTD 电阻的变化。与复杂的测量相比，发现差异小于 10%。