In Situ Dielectric Al2O3/β-Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition,Advanced Electronic Materials

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In Situ Dielectric Al2O3/β-Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-08-28 , DOI: 10.1002/aelm.202100333
Saurav Roy ₁ , Adrian E. Chmielewski ₂ , Arkka Bhattacharyya ₁ , Praneeth Ranga ₁ , Rujun Sun ₁ , Michael A. Scarpulla ₁ , Nasim Alem ₂ , Sriram Krishnamoorthy _{1,

3}

Affiliation

High quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al₂O₃ on β-Ga₂O₃ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al₂O₃ is performed in the same reactor as Ga₂O₃ using trimethylaluminum and O₂ as precursors without breaking the vacuum at a growth temperature of 600 °C. The fast and slow near interface traps at the Al₂O₃/β-Ga₂O₃ interface are identified and quantified using stressed capacitance–voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D_it) are measured using ultraviolet-assisted CV technique. The average D_it for the MOSCAP is determined to be 6.4 × 10¹¹ cm⁻²eV⁻¹. The conduction band offset of the Al₂O₃/ Ga₂O₃ interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al₂O₃/Ga₂O₃ interface. The current–voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV cm⁻¹. This in situ Al₂O₃ dielectric on β-Ga₂O₃ with improved dielectric properties can enable Ga₂O₃-based high-performance devices.

中文翻译：

使用金属-有机化学气相沉积法生长的原位介电 Al2O3/β-Ga2O3 界面

高质量的电介质-半导体界面对于可靠的高性能晶体管至关重要。本文报道Al的原位有机金属化学气相沉积₂ ö ₃上的β-Ga ₂ ö ₃作为潜在的更好的替代方案中最常用的原子层沉积（ALD）。Al ₂ O ₃的生长在与 Ga ₂ O ₃相同的反应器中进行，使用三甲基铝和 O ₂作为前体，在 600°C 的生长温度下不破坏真空。Al ₂ O ₃ /β-Ga ₂ O ₃处的快慢近界面陷阱使用金属氧化物半导体电容器 (MOSCAP) 结构上的应力电容 - 电压 (CV) 测量来识别和量化界面。使用紫外线辅助 CV 技术测量初始填充陷阱的浅层和深层密度 (D _it )。MOSCAP的平均D _it被确定为6.4 × 10 ¹¹ cm ^-2 eV ^-1。Al ₂ O ₃ / Ga ₂ O ₃界面的导带偏移也由 CV 测量确定，发现为 1.7 eV，这与 ALD Al ₂ O ₃的现有文献报道非常一致/Ga ₂ O ₃界面。还分析了电流-电压特性，提取的平均击穿场约为 5.8 MV cm ^-1。这种在β-Ga ₂ O _{3 上}具有改进介电性能的原位Al ₂ O ₃电介质可以实现基于Ga ₂ O ₃的高性能器件。

更新日期：2021-08-28

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