In this report, ZnO /La_0.3Ca_0.7MnO₃ /SrTiO₃ (ZnO /LCMO /STO) heterostructures, with various thicknesses of LCMO, were grown successfully using chemical solution deposition (CSD) method. X–ray diffraction (XRD) measurement confirms the presence of LCMO and ZnO phases only without any other unwanted phases. To understand the charge conduction mechanisms across ZnO /LCMO interface as well as for LCMO manganite thin layer, temperature dependent resistivity measurements have been investigated under different applied magnetic fields. The measured ρ (T) data of all the heterostructures in current perpendicular to plane (CPP; for ZnO /LCMO interface studies) mode and current in plane (CIP; for LCMO thin layer studies) mode show the semiconducting behaviour throughout the temperature and magnetic field range studied. The semiconducting state of all the heterostructures have been studied using Mott type variable range hopping (VRH) mechanism to understand the field dependence of charge carrier localization length. Observed negative magnetoresistance (MR) has been discussed in detail with its dependence on applied magnetic field, temperature and manganite layer thickness.

在本报告中，ZnO /La _0.3 Ca _0.7 MnO ₃ /SrTiO ₃使用化学溶液沉积 (CSD) 方法成功生长了具有不同厚度 LCMO 的 (ZnO /LCMO /STO) 异质结构。X 射线衍射 (XRD) 测量证实仅存在 LCMO 和 ZnO 相，而没有任何其他不需要的相。为了了解 ZnO / LCMO 界面以及 LCMO 锰矿薄层的电荷传导机制，在不同外加磁场下研究了与温度相关的电阻率测量。垂直于平面的电流（CPP；对于 ZnO / LCMO 界面研究）模式和平面电流（CIP；对于 LCMO 薄层研究）模式中所有异质结构的测量 ρ (T) 数据显示了整个温度和磁性的半导体行为研究的领域范围。已经使用莫特型可变范围跳跃 (VRH) 机制研究了所有异质结构的半导体状态，以了解电荷载流子定位长度的场依赖性。已详细讨论了观察到的负磁阻 (MR)，它依赖于施加的磁场、温度和锰矿层厚度。