Tunable electronics are of great potential for intelligent, adaptable systems. Memristors and memcapacitors have been extensively investigated recently as low power, high density, and high-speed elements to provide tunable-state needed by many emerging applications. Examples of such systems are tunable filters, tunable antennas, multi-level memory, and computing components. This work reports on a novel tunable analog memimpedance device. For the first time, it is proved that analog change in both resistance and capacitance can be achieved simultaneously in the same metal–semiconductor-metal structure. The novel planar geometry device consists of silver-reduced graphene oxide-silver. The multistate memimpedance behavior is observed and investigated for different oxide widths and the results confirmed the scaling of the device capacitance accordingly. Detailed study based on experimental findings shows that the capacitance of the novel system presented in this work follows n-type MOS capacitance behavior. The device is fabricated on a flexible substrate which extends its value to be deployable in smart wearable devices, in addition to its compatibility with CMOS Technology.

可调谐电子设备对于智能、适应性强的系统具有巨大的潜力。忆阻器和忆阻器最近作为低功率、高密度和高速元件被广泛研究，以提供许多新兴应用所需的可调状态。此类系统的示例是可调滤波器、可调天线、多级存储器和计算组件。这项工作报告了一种新颖的可调模拟记忆阻抗设备。首次证明在相同的金属-半导体-金属结构中可以同时实现电阻和电容的模拟变化。新型平面几何器件由银还原氧化石墨烯-银组成。观察和研究不同氧化物宽度的多态 memimpedance 行为，结果相应地证实了器件电容的缩放。基于实验结果的详细研究表明，这项工作中提出的新型系统的电容遵循 n 型 MOS 电容行为。该设备在柔性基板上制造，除了与 CMOS 技术兼容外，还扩展了其可部署在智能可穿戴设备中的价值。