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Local Structure Regulation in Near-Infrared Persistent Phosphor of ZnGa2O4:Cr3+ to Fabricate Natural-Light Rechargeable Optical Thermometer
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-08-27 , DOI: 10.1021/acsaelm.1c00305 Junqing Xiahou 1 , Qi Zhu 1 , Lin Zhu 2 , Siyuan Li 1 , Ji-Guang Li 3
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-08-27 , DOI: 10.1021/acsaelm.1c00305 Junqing Xiahou 1 , Qi Zhu 1 , Lin Zhu 2 , Siyuan Li 1 , Ji-Guang Li 3
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Modern engineering fields put forward requirements for optical temperature sensors, which need natural-light excitation/storage and near-infrared (NIR) afterglow emission for some special conditions. Here, NIR persistent luminescent phosphors of ZnGa2–x(Mg/Ge)xO4:Cr3+ (x = 0–1.25) have been synthesized. The incorporation of Mg2+/Ge4+ ions in ZnGa2O4:Cr3+ resulted in more defect clusters of “MgGa′–GeGa•” and “ZnGa′–GeGa•” and interstitial oxygens (OInt). Increasing the calcination temperature and Mg2+/Ge4+ doping both contributed to the generation of OInt. Higher efficiency of visible light excitation was observed, mainly due to the defect clusters and OInt. The samples exhibited a bright NIR emission at 695 nm by exposure to UV or visible light, and the NIR signal can last longer than 1 h after the stoppage of excitation. Incorporation of Mg2+/Ge4+ and increasing the calcination temperature both resulted in a deeper trap depth. However, the density of trapped charge carriers takes the dominant role in the persistent luminescence. Therefore, the x = 0.25 sample, having the most trapped charge carriers, exhibits the best afterglow performance. The prepared phosphor exhibited a temperature-dependent persistent luminescence behavior, which can charge natural light and release NIR light repeatedly many times, indicating that they are the potential natural-light rechargeable materials for temperature sensing.
中文翻译：
ZnGa2O4:Cr3+近红外持久荧光粉的局部结构调控，用于制作自然光可充电光学温度计
现代工程领域对光学温度传感器提出了要求，在某些特殊条件下需要自然光激发/存储和近红外（NIR）余辉发射。在这里，已经合成了 ZnGa 2– x (Mg/Ge) x O 4 :Cr 3+ ( x = 0–1.25) 的NIR 持久发光荧光粉。Mg 2+ /Ge 4+离子在ZnGa 2 O 4 :Cr 3+ 中的掺入导致更多的“Mg Ga ' –Ge Ga • ”和“Zn Ga ' –Ge Ga •缺陷簇””和间隙氧（O Int）。提高煅烧温度和Mg 2+ /Ge 4+掺杂都有助于O Int的生成。观察到更高的可见光激发效率，主要是由于缺陷簇和 O Int。样品通过暴露在紫外或可见光下，在 695 nm 处表现出明亮的近红外发射，并且在激发停止后近红外信号可以持续超过 1 小时。Mg 2+ /Ge 4+ 的掺入和提高煅烧温度都导致更深的陷阱深度。然而，被困电荷载流子的密度在持续发光中起主导作用。因此，x= 0.25 样品，具有最多的俘获电荷载流子，表现出最好的余辉性能。制备的荧光粉表现出依赖于温度的持续发光行为，可以多次对自然光充电并多次释放近红外光，表明它们是潜在的用于温度传感的自然光可充电材料。
更新日期：2021-09-28
中文翻译：
ZnGa2O4:Cr3+近红外持久荧光粉的局部结构调控，用于制作自然光可充电光学温度计
现代工程领域对光学温度传感器提出了要求，在某些特殊条件下需要自然光激发/存储和近红外（NIR）余辉发射。在这里，已经合成了 ZnGa 2– x (Mg/Ge) x O 4 :Cr 3+ ( x = 0–1.25) 的NIR 持久发光荧光粉。Mg 2+ /Ge 4+离子在ZnGa 2 O 4 :Cr 3+ 中的掺入导致更多的“Mg Ga ' –Ge Ga • ”和“Zn Ga ' –Ge Ga •缺陷簇””和间隙氧（O Int）。提高煅烧温度和Mg 2+ /Ge 4+掺杂都有助于O Int的生成。观察到更高的可见光激发效率，主要是由于缺陷簇和 O Int。样品通过暴露在紫外或可见光下，在 695 nm 处表现出明亮的近红外发射，并且在激发停止后近红外信号可以持续超过 1 小时。Mg 2+ /Ge 4+ 的掺入和提高煅烧温度都导致更深的陷阱深度。然而，被困电荷载流子的密度在持续发光中起主导作用。因此，x= 0.25 样品，具有最多的俘获电荷载流子，表现出最好的余辉性能。制备的荧光粉表现出依赖于温度的持续发光行为，可以多次对自然光充电并多次释放近红外光，表明它们是潜在的用于温度传感的自然光可充电材料。
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