Monolithic SiC, for the first time, was seamless joined at a low temperature of 1200 °C using electric field-assisted sintering technology. A 300 nm Yb coating on SiC was used as the joining filler to form Yb₃Si₂C₂ via an in-situ reaction with the SiC. A liquid phase was formed by an eutectic reaction between Yb₃Si₂C₂ and SiC. Almost completely seamless joints were formed by the precipitated SiC grains, which were fully consolidated with the SiC matrix with the help of in-situ formed liquid phase, followed by its elimination under the uniaxial pressure. The bending strength of the seamless joint joined at 1500 °C for 15 min was as high as 257.2 ± 31.1 MPa, which was comparable to the strength of the SiC matrix. As a result, the failure occurred in the matrix indicated a sound joint was obtained. The proposed low temperature seamless joining could potentially be used for joining of SiC-based composite.

首次使用电场辅助烧结技术在 1200°C 的低温下无缝连接单片 SiC。使用 SiC 上的 300 nm Yb 涂层作为接合填料，通过与 SiC 的原位反应形成 Yb ₃ Si ₂ C ₂。Yb ₃ Si ₂ C ₂共晶反应形成液相和碳化硅。几乎完全无缝的接头由析出的 SiC 晶粒形成，在原位形成的液相的帮助下与 SiC 基体完全固结，然后在单轴压力下消除。无缝接头在 1500°C 下连接 15 分钟的弯曲强度高达 257.2±31.1 MPa，与 SiC 基体的强度相当。结果，在矩阵中发生的故障表明获得了良好的接头。所提出的低温无缝连接有可能用于连接 SiC 基复合材料。