ABSTRACT

The mechanical stability of commercial GaP/Si templates during thermal annealing and subsequent growth of GaP and AlGaP using metal-organic chemical-vapour deposition is investigated. Although the as-grown GaP layer of the template originally presents an excellent surface morphology, annealing at temperatures between 645 ${}^{\circ }$C to 845 ${}^{\circ }$C to remove the native oxide prior to growth leads to plastic relaxation, accompanied by a variety of defects, including a dense grid of micro-twins. These micro-twins detrimentally affect GaP and AlGaP layers grown subsequently on the template.

中文翻译：

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GaP在001 Si衬底上生长的弛豫机制：缺陷对GaP/Si模板上AlGaP层生长的影响

摘要

研究了商业 GaP/Si 模板在热退火和随后使用金属有机化学气相沉积的 GaP 和 AlGaP 生长过程中的机械稳定性。虽然模板的生长态 GaP 层最初呈现出优异的表面形貌，但在 645 ${}^{\circ }$C 至 845 ${}^{\circ }$在生长之前去除天然氧化物的 C 导致塑性松弛，伴随着各种缺陷，包括致密的微孪晶网格。这些微孪晶会对随后在模板上生长的 GaP 和 AlGaP 层产生不利影响。