In this study, Zinc Oxide (ZnO) microrods were prepared on chemically etched macroporous silicon (mPS) substrates by chemical bath deposition (CBD) technique. Effect of CBD growth times (1, 3, and 5 h) on the physical, structural, elemental, and optical properties were analyzed using field emission scanning electron microscopy (FESEM), energy-dispersive X-ray (EDX), X-ray diffraction (XRD), Raman spectroscopy, and Ultraviolet–visible (UV–Vis) spectroscopy. The electrochemical etching process results a deep porous layer thickness of 66.91 µm and large macroporous size of 6.64 µm. Morphological analysis reveals the increasing size as well as the density of ZnO microrods on the mPS substrates, proportional to the growth times. The elemental analysis by EDX detected the presence of silicon and oxygen in mPS and the presence of silicon, zinc, and oxygen in ZnO on mPS without other impurities. XRD revealed the polycrystalline ZnO wurtzite hexagonal structures with intense peak at (002). Raman scattering analysis provides observation on broadening and shifting of Raman spectra at 302 and 520 cm⁻¹ of mPS and the presence of E₂ (High) mode by ZnO on mPS at a longer CBD growth time of 5 h. UV–Vis spectra revealed that the bandgap of the structures was found at 2.90 eV for mPS, and at (3.10, 3.12, and 3.15 eV) for ZnO on mPS, which is lower than the standard value of 3.37 eV for bulk ZnO. The incorporation of ZnO microrods on the mPS in this work was unique as the structure was unevenly grown on the inter-connected base substrate and could find a potential application as optoelectronic device.

在这项研究中，通过化学浴沉积 (CBD) 技术在化学蚀刻的大孔硅 (mPS) 衬底上制备了氧化锌 (ZnO) 微棒。使用场发射扫描电子显微镜 (FESEM)、能量色散 X 射线 (EDX)、X 射线分析 CBD 生长时间（1、3 和 5 小时）对物理、结构、元素和光学特性的影响衍射 (XRD)、拉曼光谱和紫外-可见 (UV-Vis) 光谱。电化学蚀刻工艺产生了 66.91 µm 的深多孔层厚度和 6.64 µm 的大孔尺寸。形态学分析揭示了 mPS 基板上 ZnO 微棒的尺寸和密度增加，与生长时间成正比。EDX 元素分析检测到 mPS 中存在硅和氧，以及存在硅、锌、和无其他杂质的 mPS 上 ZnO 中的氧。XRD显示多晶ZnO纤锌矿六方结构在（002）处具有强烈峰。拉曼散射分析可观察到拉曼光谱在 302 和 520 cm 处的展宽和位移^-1的 mPS 和ZnO 在 mPS 上的 E ₂ (高) 模式的存在，CBD 生长时间较长，为 5 小时。紫外-可见光谱显示，mPS 的结构带隙为 2.90 eV，mPS 上的 ZnO 为 (3.10、3.12 和 3.15 eV)，低于块状 ZnO 的标准值 3.37 eV。在这项工作中，在 mPS 上加入 ZnO 微棒是独一无二的，因为该结构在互连的基底上生长不均匀，并且可以作为光电器件获得潜在的应用。