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Etching characteristics of hydrogenated amorphous carbon with different sp2/sp3 hybridization ratios in CF4/O2 plasmas
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2021-08-26 , DOI: 10.1002/ppap.202100075
Jie Li 1 , Sun J. Kim 1 , Seunghun Han 1 , Yongjae Kim 2 , Heeyeop Chae 1, 2
Affiliation  

Amorphous carbon is used as a hard mask for dielectric etching with a high aspect ratio in the fabrication processes of semiconductor devices. The dependence of the etching characteristics of hydrogenated amorphous carbon (a-C:H) films on the sp2/sp3 hybridization ratios was studied for CF4/O2 plasma mixtures. The etch rate of sp3-rich a-C:H is 33.7 times higher than that of sp2-rich a-C:H in a plasma comprising 50% CF4 and 50% O2. The etch rate of the sp2-rich a-C:H exhibits a linear correlation with the ion density of CF4/O2 plasma, whereas that of the sp3-rich a-C:H exhibits a second-order exponential correlation with O radical density. A combined etch rate model was suggested to explain the etch rates of a-C:H. Ion-enhanced etching is identified as the dominant etching mechanism for the sp2-rich a-C:H, whereas spontaneous chemical etching is the main reaction mechanism for the sp3-rich a-C:H in CF4/O2 plasmas.

中文翻译:

不同sp2/sp3杂化比的氢化非晶碳在CF4/O2等离子体中的刻蚀特性

在半导体器件的制造过程中,非晶碳被用作具有高纵横比的介质蚀刻的硬掩模。针对CF 4 /O 2等离子体混合物研究了氢化非晶碳(aC:H)膜的蚀刻特性对sp 2 /sp 3杂化比的依赖性。属的蚀刻速率3富的aC:H比SP的33.7倍以上2富的aC:H在等离子体包含50%的CF 4和50%氧气2. SP的蚀刻速率2富AC: H 与 CF 4 /O 2的离子密度呈线性相关等离子体,而富含sp 3 的aC:H 则表现出与 O 自由基密度的二阶指数相关性。建议使用组合蚀刻速率模型来解释 aC:H 的蚀刻速率。离子增强蚀刻被认为是富含sp 2 的aC:H的主要蚀刻机制,而自发化学蚀刻是CF 4 /O 2等离子体中富含sp 3 的aC:H的主要反应机制。
更新日期:2021-11-04
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