Etching characteristics of hydrogenated amorphous carbon with different sp2/sp3 hybridization ratios in CF4/O2 plasmas,Plasma Processes and Polymers

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Etching characteristics of hydrogenated amorphous carbon with different sp2/sp3 hybridization ratios in CF4/O2 plasmas
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2021-08-26 , DOI: 10.1002/ppap.202100075
Jie Li ₁ , Sun J. Kim ₁ , Seunghun Han ₁ , Yongjae Kim ₂ , Heeyeop Chae _{1,

2}

Affiliation

Amorphous carbon is used as a hard mask for dielectric etching with a high aspect ratio in the fabrication processes of semiconductor devices. The dependence of the etching characteristics of hydrogenated amorphous carbon (a-C:H) films on the sp²/sp³ hybridization ratios was studied for CF₄/O₂ plasma mixtures. The etch rate of sp³-rich a-C:H is 33.7 times higher than that of sp²-rich a-C:H in a plasma comprising 50% CF₄ and 50% O_2. The etch rate of the sp²-rich a-C:H exhibits a linear correlation with the ion density of CF₄/O₂ plasma, whereas that of the sp³-rich a-C:H exhibits a second-order exponential correlation with O radical density. A combined etch rate model was suggested to explain the etch rates of a-C:H. Ion-enhanced etching is identified as the dominant etching mechanism for the sp²-rich a-C:H, whereas spontaneous chemical etching is the main reaction mechanism for the sp³-rich a-C:H in CF₄/O₂ plasmas.

中文翻译：

不同sp2/sp3杂化比的氢化非晶碳在CF4/O2等离子体中的刻蚀特性

在半导体器件的制造过程中，非晶碳被用作具有高纵横比的介质蚀刻的硬掩模。针对CF ₄ /O ₂等离子体混合物研究了氢化非晶碳(aC:H)膜的蚀刻特性对sp ² /sp ³杂化比的依赖性。属的蚀刻速率³富的aC：H比SP的33.7倍以上²富的aC：H在等离子体包含50％的CF ₄和50％氧气_2. SP的蚀刻速率²富AC： H 与 CF ₄ /O ₂的离子密度呈线性相关等离子体，而富含sp ^{3 的}aC:H 则表现出与 O 自由基密度的二阶指数相关性。建议使用组合蚀刻速率模型来解释 aC:H 的蚀刻速率。离子增强蚀刻被认为是富含sp ^{2 的}aC:H的主要蚀刻机制，而自发化学蚀刻是CF ₄ /O ₂等离子体中富含sp ^{3 的}aC:H的主要反应机制。

更新日期：2021-11-04

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