In this study, C₂₉H₃₂O₁₇ was deposited onto p-type Si crystal to obtain Al/(C₂₉H₃₂O₁₇)/p-Si (MPS) structures. The complex-dielectric-constant (${\epsilon }^{\prime }$ and ${\epsilon }^{″}$), loss-tangent (tanδ), electric-modulus ($M^{\prime }$ and $M^{″})$ and ac electrical-conductivity (σ_ac) of these structures were investigated using impedance-dielectric-spectroscopy. All these parameters were found strong function of frequency and voltage due to a special-distribution of surface-states (N_ss) at depletion and series-resistance (R_s) at accumulation-region. While the ${\epsilon }^{\prime }$, ${\epsilon }^{″}$ and tanδ values decrease with frequency increment, $M^{\prime }$ and σ_ac values increase. But, $M^{″}$-V and $M^{″}$-ln$\left(f\right)$ plots have a peak for each bias-voltage, respectively. The magnitude of $M^{″}$-V peak decreases with frequency increment, its position shifts towards to higher bias voltages due to restructure and reordering of N_ss, R_s and polarization effects. Experimental-results confirmed that the polarization can be easily occurred at low-intermediate frequencies and the majority of N_ss, consequently, contribute to the deviation of dielectric properties of the MPS structure.

在本研究中，C ₂₉ H ₃₂ O ₁₇沉积在p型Si晶体上以获得Al/(C ₂₉ H ₃₂ O ₁₇ )/p-Si (MPS)结构。复介电常数 (${\epsilon }^{\prime }$ 和 ${\epsilon }^{”}$), 损耗角正切 (tan δ ), 电模量 (${米}^{\prime }$ 和 ${米}^{”})$使用阻抗介电光谱研究了这些结构的_交流电导率 (σ _ac )。由于耗尽区的表面态 ( N _ss ) 和累积区的串联电阻 ( R _s )的特殊分布，所有这些参数都被发现是频率和电压的强函数。虽然${\epsilon }^{\prime }$, ${\epsilon }^{”}$tan δ值随频率增加而减小，${米}^{\prime }$和σ _AC值增加。但，${米}^{”}$- V和${米}^{”}$- ln$\left(F\right)$图中的每个偏置电压都有一个峰值。的大小${米}^{”}$-V peak 随着频率增加而减小，由于N _ss、R _s和极化效应的重构和重新排序，其位置向更高的偏置电压移动。实验结果证实，极化很容易发生在低中频和大部分N _ss，从而导致 MPS 结构的介电特性的偏差。