Organic–inorganic hybrid gate dielectric using bifunctional polyhedral oligomeric silsesquioxane for low-voltage organic thin-film transistors,Bulletin of the Korean Chemical Society

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Organic–inorganic hybrid gate dielectric using bifunctional polyhedral oligomeric silsesquioxane for low-voltage organic thin-film transistors
Bulletin of the Korean Chemical Society ( IF 2.3 ) Pub Date : 2021-08-26 , DOI: 10.1002/bkcs.12379
Byungseok Yu ₁ , Young‐Geun Ha ₁

Affiliation

Herein, we report the facile fabrication of rationally designed, high-performance organic–inorganic hybrid dielectric films constructed by combining a one-step solution processing and ultraviolet (UV) irradiation under ambient conditions. For the exceptional dielectric properties and facile fabrication process, we use bifunctional polyhedral oligomeric silsesquioxane (POSS) with UV cross-linking and hydrophobic properties to prepare precursor solutions for the hybrid dielectric films. The bifunctional POSS enables the fabrication of a dense network of hybrid films with UV curing at under ambient conditions. The prepared hybrid gate dielectrics exhibit high capacitance (~300 nF/cm²), exceptional surface smoothness (root-mean-square roughness <0.4 nm), and excellent leakage current properties (10⁻⁶ A/cm² at 2 MV/cm). In addition, the hydrophobic function of bifunctional POSS enables the low surface energy of fabricated hybrid gate dielectrics without further treatment. Pentacene-based organic thin-film transistors, fabricated with a hybrid dielectric, function well at low voltage with excellent thin-film transistor performances.

中文翻译：

使用双功能多面体低聚倍半硅氧烷的有机-无机混合栅极电介质用于低压有机薄膜晶体管

在此，我们报告了通过在环境条件下将一步溶液处理和紫外线 (UV) 照射相结合而构建的合理设计的高性能有机-无机杂化介电薄膜的简便制造。为了获得出色的介电性能和简便的制造工艺，我们使用具有紫外线交联和疏水性能的双功能多面体低聚倍半硅氧烷 (POSS) 来制备混合介电薄膜的前体溶液。双功能 POSS 能够在环境条件下通过紫外线固化制造密集的混合薄膜网络。制备的混合栅极电介质具有高电容（~300 nF/cm ²）、优异的表面光滑度（均方根粗糙度 <0.4 nm）和优异的漏电流特性（10 ^-6 A/cm ²在 2 MV/cm)。此外，双功能 POSS 的疏水功能使制造的混合栅极电介质的表面能较低，无需进一步处理。基于并五苯的有机薄膜晶体管采用混合电介质制造，在低电压下运行良好，具有出色的薄膜晶体管性能。

更新日期：2021-10-27

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