This paper presents the frequency dielectric measurements of the N type ternary semiconductor compound of Cu₅In₉Se₁₆ in order to analyze the mechanisms of charge transport and dielectric losses. The universal laws of Elliot and Jonscher are used to identify the conduction mechanisms. The experimental data agree with the theoretical models of hopping and polaron tunneling. The values of some parameters related to the dominant conduction mechanisms are estimated.

中文翻译：

---

n型Cu5In9Se16半导体化合物的介电光谱

本文介绍了 Cu ₅ In ₉ Se ₁₆的 N 型三元半导体化合物的频率介电测量，以分析电荷传输和介电损耗的机制。Elliot 和 Jonscher 的普遍定律用于识别传导机制。实验数据与跳跃和极化子隧穿的理论模型一致。估计与主导传导机制相关的一些参数的值。