Upconversion (UC) emission of Er–Yb doped strontium tungstate (SrWO₄:Er³⁺-Yb³⁺) thin films on silicon substrates prepared by the radio frequency (RF) magnetron sputtering method using different RF powers has been investigated and reported. The X-ray diffraction patterns showed that the tetragonal phase of SrWO₄ formed with an improvement in the crystallinity of the films at higher RF power. Atomic force microscopy images demonstrated the homogeneity of the grains on the surface and an increment of grain size with an increase in RF power during deposition. Auger electron spectroscopy was used for the analysis of the interface of the thin films, the Si interdiffusion as well as the role of the thickness with an increase in the sputtering power of the RF deposition. The UC emission of the films prepared at the different RF powers excited at 980 nm was recorded. An enhancement in the intensity with an increase in the RF powers was obtained. Three different bands of UC emission were recorded, which were assigned to the ²H_11/2/⁴S_3/2 → ⁴I_15/2 (two green bands) and the one red band (⁴F_9/2 → ⁴I_15/2) transitions for the Er³⁺ ions. The maximum intensity of UC emission was recorded at 240 W RF power due to a better crystallinity and the bigger size of the grains in the film as well as a better defined interface between the thin film and the substrate.

上转换（UC）铒镱的掺杂发射钨锶（SrWO ₄：铒³⁺ -Yb ³⁺）上由射频制备的硅衬底薄膜（RF）磁控管使用不同的RF功率溅射法进行了研究和报告。X 射线衍射图表明 SrWO ₄的四方相在更高的射频功率下，薄膜的结晶度得到改善。原子力显微镜图像表明表面晶粒的均匀性和晶粒尺寸随着沉积过程中射频功率的增加而增加。俄歇电子能谱用于分析薄膜的界面、Si 相互扩散以及厚度随 RF 沉积溅射功率增加的作用。记录在 980 nm 激发的不同射频功率下制备的薄膜的 UC 发射。随着射频功率的增加，强度得到了增强。记录了三个不同的 UC 发射波段，它们被分配给² H _11/2 / ⁴ S _3/2  → Er ³⁺离子的⁴ I _15/2（两个绿色带）和一个红色带（⁴ F _9/2  →  ⁴ I _15/2）跃迁。UC 发射的最大强度记录在 240 W RF 功率下，这是由于薄膜中更好的结晶度和更大的晶粒尺寸以及薄膜和基板之间更明确的界面。