Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers,Physica Status Solidi (B) - Basic Solid State Physics

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Stacking Fault Manifolds and Structural Configurations of Partial Dislocations in InGaN Epilayers
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-08-25 , DOI: 10.1002/pssb.202100190
Isaak G. Vasileiadis ₁ , Imad Belabbas ₂ , Calliope Bazioti ₁ , Julita Smalc-Koziorοwska ₃ , Philomela Komninou ₁ , George P. Dimitrakopulos ₁

Affiliation

The configurations of basal stacking fault (BSF) manifolds often observed in III-nitride alloy epilayers, particularly InGaN, are considered herein. Using high-resolution transmission electron microscopy (HRTEM), it is shown that the folds and steps of intrinsic BSFs can acquire a Shockley-like partial dislocation character depending on the relative senses of the BSF stackings. This can lead to the introduction of extra geometrically necessary threading dislocations in the epilayer on account of variant coexistence. Moreover, it is demonstrated that the overlap of two I₁ BSFs can transform into a single I₂ BSF, which is terminated by a glissile Shockley dislocation. Shockley and Shockley-like partial dislocations can acquire line directions comprising either <

\bar{1} \bar{1} 20

> a-line or <1

\bar{1}

00> m-line segments. Using atomistic calculations, the core structures of the m-line partials are provided and their visibility is examined by HRTEM as well as the possibility of their discrimination from the a-line ones.

中文翻译：

InGaN 外延层中部分位错的堆垛层错流形和结构配置

本文考虑了在 III 族氮化物合金外延层，特别是 InGaN 中经常观察到的基础堆垛层错 (BSF) 流形的配置。使用高分辨率透射电子显微镜 (HRTEM)，表明本征 BSF 的折叠和台阶可以根据 BSF 堆叠的相对意义获得类似肖克利的部分位错特征。由于变体共存，这可能导致在外延层中引入额外的几何必要的穿透位错。此外，还证明了两个 I ₁ BSF的重叠可以转变为单个 I ₂ BSF，其终止于滑动肖克利位错。肖克利和类似肖克利的部分位错可以获得包括 <