Active transverse electric and transverse magnetic pass polarizers with lengths of only 1.92 $\mathrm{\mu }$m and 5.95 $\mathrm{\mu }$m based on silicon waveguides and phase change material VO₂ films are theoretically demonstrated. The optical characteristics of the polarizers are simulated by using finite difference mode simulation. By controlling the phase state of VO₂ film, the polarizers can realize the regulation of TE and TM polarizations. The insertion losses of both polarizers are less than 2.2 dB in the insulating state. When trigger to the metallic state, the unwanted polarization attenuation exceeds 21.07 dB while insertion losses are kept below 0.71 dB at a center wavelength of 1550 nm. Both polarizers have a high extinction ratio in the operating bandwidth of 200 nm. This provides a new way for polarizers based on VO₂ film and silicon waveguide.

长度仅为 1.92 的有源横向电和横向磁通偏振器 $\mathrm{\mu }$米和 5.95 $\mathrm{\mu }$m 基于硅波导和相变材料 VO ₂薄膜的理论证明。通过使用有限差分模式模拟来模拟偏振器的光学特性。通过控制VO ₂薄膜的相位状态，偏振片可以实现TE和TM偏振的调节。两个偏光片在绝缘状态下的插入损耗均小于2.2 dB。当触发到金属状态时，不需要的极化衰减超过 21.07 dB，而插入损耗在 1550 nm 的中心波长处保持在 0.71 dB 以下。两种偏振器在 200 nm 的工作带宽内都具有高消光比。这为基于VO ₂薄膜和硅波导的偏振器提供了一种新方法。