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Investigation of Phase Transition from Critical Nucleus to Bi2Te3 Nanoplate Based on Screw Dislocation-Driven Spiral Growth by Solvothermal Synthesis
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2021-08-26 , DOI: 10.1002/crat.202100153 Hideo Yamazaki 1 , Rikuo Eguchi 1 , Masayuki Takashiri 1
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2021-08-26 , DOI: 10.1002/crat.202100153 Hideo Yamazaki 1 , Rikuo Eguchi 1 , Masayuki Takashiri 1
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Two-dimensional bismuth telluride (Bi2Te3) nanoplates have great potential for thermoelectrics and topological insulators. The material performance increases as the nanoplate size decreases. However, the initial stage of the crystal growth of the nanoplates has not been significantly investigated. The Bi2Te3 nanoplates are prepared by solvothermal synthesis and the phase transition based on the screw dislocation-driven spiral growth of the nanoplates is investigated. The optimal synthesis conditions are first determined by controlling the Te concentration in the precursor solution. The spiral-grown nanoplates are collected from the synthesized products. The diameter of the critical nucleus is calculated to be in the range of 5.0–7.2 nm from the step width in the spiral. Subsequently, the solvothermal synthesis is implemented by changing the synthesis time from 15 to 1200 min under the optimal conditions of the precursor solution. Crystals are not grown in the solution at 15 min. At 25 min, an intermediate phase of Bi2TeO5 with an approximate grain size of 5.0 nm is formed, which corresponds to the calculated diameter of the critical nucleus. Another intermediate phase of Te is formed, and the Bi2Te3 nanoplates with a lateral size of 300 nm grow slowly at the expense of Bi2TeO5 and Te.
中文翻译：
基于螺旋位错驱动螺旋生长的溶剂热合成法研究从临界核到Bi2Te3纳米片的相变
二维碲化铋 (Bi 2 Te 3 ) 纳米片在热电和拓扑绝缘体方面具有巨大的潜力。材料性能随着纳米板尺寸的减小而增加。然而，纳米板晶体生长的初始阶段尚未得到显着研究。比2特3通过溶剂热合成制备纳米片，并研究了基于螺旋位错驱动的纳米片螺旋生长的相变。最佳合成条件首先通过控制前体溶液中的 Te 浓度来确定。从合成产物中收集螺旋生长的纳米板。计算出的临界核的直径在距螺旋步长 5.0-7.2 nm 的范围内。随后，通过在前体溶液的最佳条件下将合成时间从 15 分钟改为 1200 分钟来实现溶剂热合成。晶体在 15 分钟时不在溶液中生长。在 25 分钟时，Bi 2 TeO 5的中间相形成了大约 5.0 nm 的晶粒尺寸，这对应于计算出的临界核直径。Te的另一个中间相形成，横向尺寸为300nm的Bi 2 Te 3纳米片以Bi 2 TeO 5和Te为代价缓慢生长。
更新日期：2021-08-26
中文翻译：
基于螺旋位错驱动螺旋生长的溶剂热合成法研究从临界核到Bi2Te3纳米片的相变
二维碲化铋 (Bi 2 Te 3 ) 纳米片在热电和拓扑绝缘体方面具有巨大的潜力。材料性能随着纳米板尺寸的减小而增加。然而，纳米板晶体生长的初始阶段尚未得到显着研究。比2特3通过溶剂热合成制备纳米片，并研究了基于螺旋位错驱动的纳米片螺旋生长的相变。最佳合成条件首先通过控制前体溶液中的 Te 浓度来确定。从合成产物中收集螺旋生长的纳米板。计算出的临界核的直径在距螺旋步长 5.0-7.2 nm 的范围内。随后，通过在前体溶液的最佳条件下将合成时间从 15 分钟改为 1200 分钟来实现溶剂热合成。晶体在 15 分钟时不在溶液中生长。在 25 分钟时，Bi 2 TeO 5的中间相形成了大约 5.0 nm 的晶粒尺寸，这对应于计算出的临界核直径。Te的另一个中间相形成，横向尺寸为300nm的Bi 2 Te 3纳米片以Bi 2 TeO 5和Te为代价缓慢生长。
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