This article presents effective utilization of light by transparent conducting oxide (TCO) layer to enhance the performance of c-Si/a-Si:H heterojunction solar cells (HJSC) by simulation. The optical and recombination losses in solar cells severely deteriorate the short circuit density (J_sc), open circuit voltage (V_oc) and then efficiency (η) of the solar cells. In order to reduce the optical losses, recombination losses and to improve the efficiency of solar cell devices, the c-Si/a-Si:H HJSC performance was investigated by planner and textured indium tin oxide (ITO) and zinc oxide (ZnO) layers as front TCO layer with AFORSHET simulations tool. Absorption and reflection spectra of ITO and ZnO layers were analysed separately before incorporating in to the c-Si/a-Si:H HJSC. The estimated solar cell parameter values of 763.7 mV, 40.96 mA cm⁻², 85.91% and 26.86% correspond to V_oc, J_sc, FF (fill factor) and η respectively for the cells with plane ZnO layers. It is found that the best values of V_oc (763.7 mV), J_sc (41.87 mA cm⁻²), FF (85.91%) and η (27.47%) were obtained with textured ZnO layer. This is mainly due to reduced reflection losses and also increased absorption of photons in c-Si wafer with texturing of TCO layer, which results in increase of short circuit density of solar cells. The efficiency of solar cells with ITO is slightly lower than the ZnO layer.

本文介绍了透明导电氧化物 (TCO) 层对光的有效利用，以通过模拟提高 c-Si/a-Si:H 异质结太阳能电池 (HJSC) 的性能。太阳能电池中的光学和复合损失严重降低了太阳能电池的短路密度（J _sc）、开路电压（V _oc）和效率（η）。为了减少光损耗、复合损耗并提高太阳能电池器件的效率，通过平面和织构氧化铟锡（ITO）和氧化锌（ZnO）研究了c-Si/a-Si:H HJSC性能层作为前 TCO 层与AFORSHET模拟工具。在加入 c-Si/a-Si:H HJSC 之前，分别分析了 ITO 和 ZnO 层的吸收和反射光谱。763.7 mV、40.96 mA cm ^-2、85.91%和26.86%的估计太阳能电池参数值分别对应于具有平面ZnO层的电池的V _oc、J _sc、FF（填充因子）和η。发现V _oc (763.7 mV)、J _sc (41.87 mA cm ^-2 )、FF (85.91%)和η的最佳值(27.47%) 是用纹理化的 ZnO 层获得的。这主要是由于减少了反射损耗，并且增加了具有 TCO 层纹理的 c-Si 晶片中光子的吸收，从而导致太阳能电池的短路密度增加。具有 ITO 的太阳能电池的效率略低于 ZnO 层。