Process technologies have been developed for electron-beam (EB) lithography aimed at silicon quantum devices and their large-scale integration. It is necessary to understand the proximity effect and construct a method for its correction to perform EB lithography of fine and complicated structures. In this study, we investigate the lithography of Si quantum devices with a point-beam EB system and a maN 2401 negative tone resist, in order to correspond to various types of device structures. We optimize temperatures for specialized pre- and post-exposure bakes for forming∼20 nm fine patterns with small line-edge roughness. Further, we demonstrated the fabrication of Si-on-insulator device patterns that have some tiny dots connected with many large wires/pads in the layout, with the careful tuning of the dose assignment. In this tuning, we used the EB process simulation to estimate the cumulative dose distribution effectively. In addition, we reproduced the experimentally obtained resist patterns via the EB process simulation after considering the mid-range effect, which is a factors in the proximity effect but is not yet deeply understood. The results of this study are expected to provide useful process technologies for EB lithography, which will help drastically accelerate the research on Si quantum devices with a high degree of freedom.

针对硅量子器件及其大规模集成的电子束 (EB) 光刻工艺技术已经开发出来。有必要了解邻近效应并构建一种对其进行校正的方法，以进行精细和复杂结构的 EB 光刻。在这项研究中，我们研究了具有点束 EB 系统和 maN 2401 负性抗蚀剂的 Si 量子器件的光刻，以对应于各种类型的器件结构。我们优化了专门的曝光前和曝光后烘烤的温度，以形成具有小线边缘粗糙度的 20 nm 精细图案。此外，我们展示了绝缘体上硅器件图案的制造，其中一些小点与布局中的许多大导线/焊盘相连，并仔细调整了剂量分配。在这个调音中，我们使用 EB 过程模拟来有效地估计累积剂量分布。此外，我们在考虑了中程效应后，通过 EB 工艺模拟再现了实验获得的抗蚀剂图案，这是邻近效应的一个因素，但尚未深入了解。这项研究的结果有望为电子束光刻提供有用的工艺技术，这将有助于大幅加速高自由度硅量子器件的研究。