In this work, the presence of photoconduction and photovoltaic effects in MOS-type structures manufactured using off-stoichiometric silicon oxide (SiO_x) deposited by HFCVD technique is reported. Current-voltage measurements under dark and illumination conditions were carried out. A photoconductive response of 1µA was found under illumination conditions, such current is about 4 orders of magnitude greater than its value in dark condition which was about 100pA. The reported MOS-type structures with SiO_x as dielectric layer undergo a change in the charge conduction mechanisms of the injection current, exhibiting a transition from the Hopping to Schottky mechanism, which is dependent on the hydrogen amount and the deposition parameters of SiO_x films. A starting charge conduction state identified as the Space Charge Limited Conduction mechanism (SCLC) is found when applying low voltages. Additionally, the photovoltaic effect was obtained and studied for these types of structures, being corroborated by current-time and voltage-time measurements in dark and illuminations conditions without applied bias. The spectral response and quantum efficiencies were also obtained, where the best internal quantum efficiency was 25.59%. The photoconductive effect is present for structures with SiO_x films without annealing, while the ones with SiO_x films that have thermal annealing exhibit the photovoltaic effect. The studied structures are suitable for photovoltaic applications and they have additional advantages namely: a short time of deposit (3 min) by using the HFCVD technique, and a single MOS-type structure.

在这项工作中，报道了使用 HFCVD 技术沉积的非化学计量氧化硅 (SiO _x )制造的 MOS 型结构中存在光电导和光伏效应。在黑暗和光照条件下进行电流-电压测量。在光照条件下发现1μA的光电导响应，该电流比其在黑暗条件下的值约100pA大约4个数量级。报道的以 SiO _x作为介电层的MOS 型结构经历了注入电流的电荷传导机制的变化，表现出从跳跃机制到肖特基机制的转变，这取决于氢的数量和 SiO _x的沉积参数电影。当施加低电压时，会发现一个起始电荷传导状态，称为空间电荷限制传导机制 (SCLC)。此外，还获得并研究了这些类型结构的光伏效应，并在没有施加偏置的黑暗和照明条件下通过电流-时间和电压-时间测量得到证实。还获得了光谱响应和量子效率，其中最佳内量子效率为 25.59%。光电导效应是存在用于利用SiO2结构_X未退火膜，而那些用的SiO _X具有热退火的薄膜表现出光伏效应。所研究的结构适用于光伏应用，它们具有额外的优势，即：使用 HFCVD 技术的沉积时间短（3 分钟），以及单一的 MOS 型结构。