In this paper, silicon oxynitride films (SiO${}_x$N${}_y$) grown by plasma-enhanced chemical vapor deposition are investigated. As precursor gases silane (${\text{SiH}}_4$), nitrous oxide (${\mathrm{N}}_2\mathrm{O}$), nitrogen (${\mathrm{N}}_2$) and ammonia (${\text{NH}}_3$) are used with different compositions. We find that for achieving high nitrogen content adding ammonia to the precursor mix is most efficient. Moreover, we investigate the balance between adsorption and desorption processes during film growth by investigating the film growth rate as a function of the substrate temperature. From these data we are able to determine an effective activation energy for the film growth, corresponding to the difference between adsorption and desorption energy. Finally, we have thoroughly investigated the optical properties of the films using spectroscopic ellipsometry. From these measurements, we suggest a parametrized model for the refractive index and extinction coefficient in a wide range of compositions based on a Cauchy- and a Lorentz-fit.

在本文中，氮氧化硅薄膜（SiO${}_X$N${}_{是}$) 通过等离子体增强化学气相沉积生长。作为前体气体硅烷（${\text{硅化氢}}_4$), 一氧化二氮 (${\mathrm{N}}_2\mathrm{哦}$）， 氮 （${\mathrm{N}}_2$) 和氨 (${\text{NH}}_3$) 用于不同的组合。我们发现，为了实现高氮含量，向前体混合物中添加氨是最有效的。此外，我们通过研究薄膜生长速率作为衬底温度的函数来研究薄膜生长过程中吸附和解吸过程之间的平衡。根据这些数据，我们能够确定薄膜生长的有效活化能，对应于吸附能和解吸能之间的差异。最后，我们使用光谱椭偏仪彻底研究了薄膜的光学特性。从这些测量结果中，我们提出了一个基于柯西和洛伦兹拟合的各种成分的折射率和消光系数的参数化模型。