We propose a novel method to generate p-type conduction and low resistivity in wide- and ultrawide-bandgap III-nitride semiconductors via doping of a magnetic element. This method is based on the energetic competition between the covalency of the magnetic element and the ligand nitrogen atoms and the exchange-correlation energy of the magnetic impurity. Using magnetic elements with large exchange-correlation energy, we can obtain p-type wide- and ultrawide-bandgap semiconductors, which are basically difficult to synthesize due to the unipolarity.

中文翻译：

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一种通过掺杂磁性元素生成 p 型宽禁带和超宽带隙 III 族氮化物的新方法

我们提出了一种通过掺杂磁性元素在宽禁带和超宽禁带 III 族氮化物半导体中产生 p 型传导和低电阻率的新方法。该方法基于磁性元素与配体氮原子的共价与磁性杂质的交换相关能之间的能量竞争。利用具有大交换相关能的磁性元素，我们可以获得p型宽禁带和超宽带禁带半导体，由于单极性，基本上难以合成。