This work experimentally demonstrates mid-infrared emittance spectra of dielectric and semi-conductor substrates with and without a germanium–antimony–tellurium (GST) film coating. The film experiences non-volatile phase changes at 140°C and 300°C. Impacts from amorphous, face-centered cubic, and hexagonal close packed phases on spectral emittance are demonstrated within the spectral range from 4 μm to 18 μm. The spectra are measured at 100°C, 200°C, 300°C, and 400°C to show temperature dependence. Close-to-total emittance is calculated for comparison. The GST film can reduce emittance from a SiO₂ substrate, but it raises close-to-normal emittance as well as the spectral emittance at wavelengths 5 μm ≤ λ ≤ 18 μm for the doped Si substrate.

中文翻译：

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锗-锑-碲薄膜涂层三相对SiO2和掺硼Si热发射的影响

这项工作通过实验证明了具有和不具有锗-锑-碲 (GST) 薄膜涂层的电介质和半导体基板的中红外发射光谱。薄膜在 140°C 和 300°C 下经历非挥发性相变。在 4 μm 到 18 μm 的光谱范围内证明了无定形、面心立方和六方密堆积相对光谱发射率的影响。光谱在 100°C、200°C、300°C 和 400°C 下测量以显示温度依赖性。计算接近总发射率以进行比较。GST 膜可以降低 SiO ₂衬底的发射率，但它提高了接近法线的发射率以及掺杂 Si 衬底在波长 5 μm ≤ λ ≤ 18 μm 处的光谱发射率。