Indium arsenide phosphide (InAsP) nanowires (NWs), a member of the III–V semiconductor family, have been used in various photonic and optoelectronic applications thanks to their unique electrical and optical properties such as high carrier mobility and adjustable band gap. In this work, we synthesize InAsP NWs and further explore their nonlinear optical properties. The ultrafast carrier dynamics and nonlinear optical response are thoroughly studied based on the nondegenerate pump probe and Z-scan experimental measurements. Two different characteristic carrier lifetimes ($\sim 2$ and $\sim 15\mathrm{ps}$) from InAsP NWs are observed during the excited-carrier relaxation process. Based on the physical model analysis, the relaxation process can be ascribed to the carrier cooling process via carrier-phonon scattering and Auger recombination. In addition, based on the measured excited-carrier lifetime and Pauli-blocking principle, we discover that InAsP NWs show strong saturable absorption properties at the wavelengths of 532 and 1064 nm. Last, we demonstrate for the first time a femtosecond ($\sim 426\mathrm{fs}$) solid-state laser based on an InAsP NWs saturable absorber at 1.04 μm. We believe that our work provides a better understanding of the InAsP NWs optical properties and will further advance their photonic applications in the near-infrared range.

中文翻译：

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InAsP 纳米线的超快载流子动力学和非线性光学响应

磷化铟 (InAsP) 纳米线 (NWs) 是 III-V 族半导体家族的一员，由于其独特的电学和光学特性，如高载流子迁移率和可调带隙，已被用于各种光子和光电应用。在这项工作中，我们合成了 InAsP NW 并进一步探索了它们的非线性光学特性。基于非简并泵浦探头和 Z 扫描实验测量，对超快载流子动力学和非线性光学响应进行了深入研究。两种不同的特征载流子寿命（$～2$ 和 $～15\mathrm{ps}$在激发载流子弛豫过程中观察到来自 InAsP NW 的 )。基于物理模型分析，弛豫过程可以归因于载流子-声子散射和俄歇复合的载流子冷却过程。此外，基于测量的激发载流子寿命和泡利阻塞原理，我们发现 InAsP 纳米线在 532 和 1064 nm 波长处显示出强的可饱和吸收特性。最后，我们首次展示了飞秒 ($～426\mathrm{FS}$) 基于 InAsP NWs 可饱和吸收器的 1.04 μm 固态激光器。我们相信我们的工作提供了对 InAsP NWs 光学特性的更好理解，并将进一步推进它们在近红外范围内的光子应用。