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630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays
Photonics Research ( IF 6.6 ) Pub Date : 2021-08-23 , DOI: 10.1364/prj.428168
Zhe Zhuang 1 , Daisuke Iida 1 , Martin Velazquez-Rizo 1 , Kazuhiro Ohkawa 1
Affiliation  

We demonstrated 10×10 arrays of InGaN 17 μm×17 μm micro-light-emitting diodes (μLEDs) with a peak wavelength from 662 to 630 nm at 1050 A/cm2. The on-wafer external quantum efficiency reached 0.18% at 50 A/cm2. The output power density of the red μLEDs was obtained as 1.76 mW/mm2, which was estimated to be higher than that of 20 μm×20 μm AlInGaP red μLEDs (630 nm). Finally, we demonstrate that InGaN red/green/blue μLEDs could exhibit a wide color gamut covering 81.3% and 79.1% of the Rec. 2020 color space in CIE 1931 and 1976 diagrams, respectively.

中文翻译:

630nm 红色 InGaN 微型发光二极管(<20 μm × 20 μm)超过 1 mW/mm2 用于全彩微型显示器

我们展示了 10×10 InGaN 阵列 17 微米×17 微米 峰值波长为 662 至 630 nm 的微型发光二极管 (μLED) 10——50 一种/厘米2. 晶圆外量子效率达到 0.18%50 一种/厘米2. 红色 μLED 的输出功率密度为1.76 兆瓦/毫米2,估计高于 20 微米×20 微米 AlInGaP 红色 μLED(630 纳米)。最后,我们证明了 InGaN 红/绿/蓝 μLED 可以表现出覆盖 Rec 81.3% 和 79.1% 的宽色域。分别为 CIE 1931 和 1976 图中的 2020 色彩空间。
更新日期:2021-09-02
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