Amorphous oxide semiconductors are promising for their use in thin-film transistor (TFT) devices due to their high carrier mobility and large-area uniformity. However, their commercialization is limited by the negative gate bias stress experienced under continuous light illumination. Here, we report an approach to improve the negative bias illumination stress (NBIS) stability of amorphous oxide semiconductors TFTs by using lanthanide-doped indium oxide semiconductors as the channel layer. The effect of different lanthanide dopants on performances of solution-processed Ln:In₂O₃ TFTs are investigated. All lanthanides exhibit strong suppression of oxygen vacancy, which shift the V_on from −13.5 V of pure In₂O₃ TFT to −1~1 V of Ln:In₂O₃ TFTs (except Ce). However, only Pr:In₂O₃ and Tb:In₂O₃ TFTs exhibit much better NBIS stability with same ΔV_on of −3.0 V, compared to much higher ΔV_on of −7.9~−15.6 V for other Ln:In₂O₃ TFTs. Our comprehensive study reveals that praseodymium and terbium act as a blue light down-conversion medium with low charge transfer transition energy for lowing photosensitivity of oxide semiconductors.

由于其高载流子迁移率和大面积均匀性，非晶氧化物半导体有望用于薄膜晶体管（TFT）器件。然而，它们的商业化受到在连续光照下经历的负栅极偏置应力的限制。在这里，我们报告了一种通过使用镧系元素掺杂的氧化铟半导体作为沟道层来提高非晶氧化物半导体 TFT 的负偏置照明应力 (NBIS) 稳定性的方法。研究了不同镧系元素掺杂剂对溶液处理的 Ln:In ₂ O ₃ TFT 性能的影响。所有镧系元素表现出的氧空位的强抑制，其中换档V_上从纯-13.5 V输入₂ ö ₃TFT到-1~1 V的Ln:In ₂ O ₃ TFT（Ce除外）。然而，只有 Pr:In ₂ O ₃和 Tb:In ₂ O ₃ TFT 表现出更好的 NBIS 稳定性，Δ V _on相同为 -3.0 V，而其他 Ln 的Δ V _on更高_，为 -7.9~-15.6 V：在₂ O ₃ TFT 中。我们的综合研究表明，镨和铽充当蓝光下转换介质，具有低电荷转移跃迁能，可降低氧化物半导体的光敏性。