The current-voltage results for nonvolatile memristive devices based on hexagonal boron-nitride nanosheets:polymethyl methacrylate nanocomposites exhibit the characteristics of write-once-read-many-times in the voltage range from −3 to 3 V. The electrical characteristics remain unchanged even the devices are under highly bended states. After the devices had finished the “writing” process, they could be read more than 500 times under both flat and bending conditions. Both the high and the low resistance states could be maintained at almost constant levels for more than 1.5 × 10⁴ s, and the ON/OFF ratio of the devices remained about 10³. After more than 2 × 10³ bendings, the electrical properties of the devices remained almost the same.

基于六方氮化硼纳米片的非易失性忆阻器件的电流-电压结果：聚甲基丙烯酸甲酯纳米复合材料在-3至3 V的电压范围内表现出一次写入多次读取的特性。即使电特性保持不变设备处于高度弯曲状态。器件完成“写入”过程后，在平面和弯曲条件下都可以读取 500 多次。高电阻状态和低电阻状态都可以保持在几乎恒定的水平超过 1.5 × 10 ⁴  s，并且器件的 ON/OFF 比保持在大约 10 ³。经过超过 2 × 10 ^{3 次}弯曲后，器件的电气特性几乎保持不变。