Two new silicon-containing poly(azomethine)s (PAzM-Me and PAzM-Ph) and two new silicon-containing poly(p-phenylvinylene)s (PPVSi-Me and PPVSi-Ph) were obtained from 4′,4′''-(dimethylsilanediyl)bis([1,1′-biphenyl]-4-carbaldehyde) and 4′,4′''-(diphenyl silanediyl)bis([1,1′-biphenyl]-4-carbaldehyde) with p-phenylendiamine for PAzMs or phenylenebis(methylene))bis(triphenylphosphonium) bromide for PPVSis. All polymers were structurally characterized by FT-IR, NMR and elemental analysis. The materials showed a high thermal stability (501–538 °C) with the TPS-core increasing this parameter. The absorption and emission of PAzMs and PPVSis were closely related with the nature of the silane-core in the backbone. All samples showed wide-band gaps where the TPS-core-based materials evidenced the lower energy transitions; PAzM-Ph (2.83 eV) and PPVSi-Ph (2.81 eV). This work lay the groundwork for new architectures of silane-based poly(azomethine)s and poly(p-phenylvinylene)s derivatives for potential optoelectronic applications.

从 4',4'' 获得了两种新的含硅聚（偶氮甲碱）（PAzM-Me 和 PAzM-Ph）和两种新的含硅聚（对苯基亚乙烯基）（PPVSi-Me 和 PPVSi-Ph） '-(二甲基硅烷二基)双([1,1'-联苯]-4-甲醛)和4',4'''-(二苯基硅烷二基)双([1,1'-联苯]-4-甲醛)与p-苯二胺用于 PAzM 或亚苯基双（亚甲基））双（三苯基鏻）溴化物用于 PPVSi。所有聚合物的结构都通过 FT-IR、NMR 和元素分析进行​​了表征。材料显示出高热稳定性 (501–538 °C)，TPS 核增加了该参数。PAzMs和PPVSis的吸收和发射与主链中硅烷核的性质密切相关。所有样品都显示出宽带隙，其中基于 TPS 核的材料证明了较低的能量转换；PAzM-Ph (2.83 eV) 和 PPVSi-Ph (2.81 eV)。这项工作为用于潜在光电应用的硅烷基聚（偶氮甲碱）和聚（对苯基亚乙烯基）衍生物的新结构奠定了基础。