We propose a transfer technique of single-wall carbon nanotube (SWCNT) films to be applied to a wide variety of flexible electronic devices. SWCNT films were first heat-treated in advance to remove solvents and dispersants in the films on high heat-resistant Cu substrates and were then poly (methyl methacrylate)-supported transferred onto low heat-resistant polyethylene terephthalate and paper substrates. We characterized the flexibility and electrical properties of the films transferred by this technique. The transferred films showed high flexibility and high electrical conductivity (8.4 × 10⁴ ∼ 1.1 × 10⁵ S/m). X-ray photoelectron spectroscopy measurements revealed that the transferred films were free from Fe residues. Although a slight amount of the Cu residues existed, it was found that the residues did not contributed to the electrical conduction. By using this technique, we enabled to fabricate highly flexible and highly electrical conductive SWCNT films on flexible substrates with low heat resistance, which provide further potential for the application of these films to flexible electronic devices.

我们提出了一种单壁碳纳米管 (SWCNT) 薄膜的转移技术，可应用于各种柔性电子设备。SWCNT薄膜首先预先热处理，以去除高耐热铜基板上薄膜中的溶剂和分散剂，然后将聚甲基丙烯酸甲酯负载转移到低耐热聚对苯二甲酸乙二醇酯和纸基板上。我们表征了通过这种技术转移的薄膜的柔韧性和电性能。转移的薄膜表现出高柔韧性和高导电性（8.4 × 10 ⁴ ∼ 1.1 × 10 ⁵秒/米）。X 射线光电子能谱测量表明转移的薄膜没有铁残留。尽管存在少量的铜残留物，但发现残留物对导电没有贡献。通过使用这种技术，我们能够在具有低耐热性的柔性基板上制造高柔性和高导电性的 SWCNT 薄膜，这为这些薄膜在柔性电子设备中的应用提供了进一步的潜力。