当前位置: X-MOL 学术Thin Solid Films › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Performance improvement of dye-sensitized solar cells by using TiO2 compact layer and silver nanowire scattering layer
Thin Solid Films ( IF 2.0 ) Pub Date : 2021-08-22 , DOI: 10.1016/j.tsf.2021.138903
Jung-Jie Huang , Tieh-Fei Cheng , Ying-Rong Ho , De-Pu Huang

In this study, indium tin oxide (ITO) glass was coated with silver nanowires (AgNWs) by ultrasonic spray coating to roughen the ITO surface, yielding a surface texture comparable to that obtained by chemical etching. A compact layer (CL) of titanium dioxide (TiO2) was coated on the AgNWs/ITO surface by sputtering to improve the properties of dye-sensitized solar cell (DSSC). A TiO2 CL was used as a protective layer on AgNWs to prevent oxidation and increase the adhesion of AgNWs. The TiO2 CL also effectively inhibited the carrier recombination between the electrolyte solution and ITO interface, thereby improving the photoelectric conversion efficiency (η) of the DSSC device. The experiment results indicated that the η of DSSC devices with a CL deposited under the working electrode increased from 4.06% to 4.37%. The integration of the CL and AgNWs to CL/AgNWs/ITO structure increased the η of DSSC devices further to 4.59%. Electrochemical impedance spectroscopy was performed to analyze two DSSC structures, namely CL/ITO and CL/AgNWs/ITO; the electron lifetime increased from 0.35 ms to 0.55 ms and the charge collection rate increased from 64.5% to 75.2%. Therefore, CL/AgNWs/ITO working electrode structure can effectively improve the performance of DSSC devices.



中文翻译:

利用TiO2致密层和银纳米线散射层改善染料敏化太阳能电池的性能

在这项研究中,氧化铟锡 (ITO) 玻璃通过超声波喷涂涂覆银纳米线 (AgNWs) 以粗糙化 ITO 表面,产生与化学蚀刻获得的表面纹理相当的表面纹理。通过溅射将二氧化钛 (TiO 2 )致密层 (CL)涂覆在 AgNWs/ITO 表面以改善染料敏化太阳能电池 (DSSC) 的性能。TiO 2 CL用作AgNWs上的保护层以防止氧化并增加AgNWs的附着力。钛白粉2CL还有效抑制了电解液与ITO界面之间的载流子复合,从而提高了DSSC器件的光电转换效率(η)。实验结果表明,在工作电极下沉积有 CL 的 DSSC 器件的 η 从 4.06% 增加到 4.37%。CL 和 AgNWs 与 CL/AgNWs/ITO 结构的集成使 DSSC 器件的 η 进一步增加到 4.59%。电化学阻抗谱分析了两种DSSC结构,即CL/ITO和CL/AgNWs/ITO;电子寿命从 0.35 ms 增加到 0.55 ms,电荷收集率从 64.5% 增加到 75.2%。因此,CL/AgNWs/ITO工作电极结构可以有效提高DSSC器件的性能。

更新日期:2021-08-29
down
wechat
bug