In this paper, the polyvinyl pyrrolidine (PVP) polymer layer doped by barium titanate (BaTiO₃) nanostructures has been prepared as an interfacial layer to fabricate a metal-semiconductor-metal (MPS) diode. The inserted layer in the metal-semiconductor (MS) structure can be changed its dielectric properties which have been studied in this work. In addition, the frequency-dependent impedance measurements are performed at 1.5 V in frequency range 100 Hz-1 MHz. The variations of the dielectric constant (ε^′)/loss (ε^′′), electrical modules, and ac electrical conductivity σ_ac of them are investigated. It is found that the use of interfacial layer increases dielectric constant of the MPS five times more than MS. Also, PVP: BaTiO₃ interlayer increases the electrical conductivity by decreasing the interfacial polarization. The results show that the conduction mechanisms are charge carrier’s interaction and trap states at the low/intermediate frequency and well-localized relaxation process at the high frequency. Therefore, PVP: BaTiO₃ interlayer can be a suitable alternative replacement of intrinsic interlayer for utilization in the nanoscale electronic and optoelectronic devices and circuits.

在本文中，已制备掺杂钛酸钡（BaTiO ₃）纳米结构的聚乙烯吡咯烷（PVP）聚合物层作为界面层来制造金属-半导体-金属（MPS）二极管。金属半导体 (MS) 结构中的插入层可以改变其介电特性，这已在本工作中进行了研究。此外，频率相关的阻抗测量是在 1.5 V 下在 100 Hz-1 MHz 的频率范围内进行的。介电常数 ( ε ^′ )/损耗 ( ε ^′′ )、电模块和交流电导率σ _{ac 的变化}其中有被调查。发现界面层的使用使 MPS 的介电常数比 MS 增加了五倍。此外，PVP: BaTiO ₃中间层通过降低界面极化来提高电导率。结果表明，传导机制是电荷载流子在低/中频的相互作用和陷阱态，以及在高频下的局部弛豫过程。因此，PVP: BaTiO ₃中间层可以作为本征中间层的合适替代替代品，用于纳米级电子和光电器件和电路。