A spin-coating process has been used to generate graphene oxide (GO) thin films on p-type silicon. The temperature-dependent basic electrical characteristics of Al/GO/p-type Si metal–semiconductor structures have been examined through current–voltage (I–V) measurements in the temperature range 80–420 K by increments of 20 K based on thermionic emission (TE) theory. At each temperature, the main electrical parameters, such as ideality factor (n), rectification ratio (RR), saturation current (I₀), barrier height (Φ_bo), and series resistance (R_S), were determined. With increasing temperature, the values of n, I₀, RR, and R_S decreased, whereas the value of Φ_bo increased. These unusual temperature fluctuations in Φ_bo and n may be rationalized in terms of twofold Gaussian distributions at 80–200 K and 220–420 K. For the high- and low-temperature regions, evaluation of these two Gaussian distributions of the I–V curves for the Al/GO/p-type Si structure yielded mean barrier heights of 1.676 and 0.555 eV with standard deviations (σ₀) of 166 mV and 76 mV, respectively. Modified ln(I₀/T²)−(q²σ_s²)/(2k²T²) vs. q/(kT) plots, which correspond to these two separate temperature regions, further corroborated these barrier height values. The value of the Richardson constant (A*), 3.567 × 10⁻⁶ A K⁻² cm⁻², is substantially lower than the known value for p-Si. However, for the distribution in the 220–420 K region, the Richardson constant of 48.069 A K⁻² cm⁻² is near to the known theoretical value of 32 A K⁻² cm⁻² for p-type Si.

旋涂工艺已被用于在 p 型硅上生成氧化石墨烯 (GO) 薄膜。Al/GO/p 型 Si 金属-半导体结构的温度相关基本电学特性已通过电流-电压 ( I – V ) 测量在 80-420 K 温度范围内通过基于热电子发射的 20 K 增量进行检查(TE) 理论。在每个温度下，确定了主要电气参数，例如理想因子 ( n )、整流比 (RR)、饱和电流 ( I ₀ )、势垒高度 (Φ _bo ) 和串联电阻 ( R _S )。随着温度升高，n , I的值₀ ，RR，和- [R_小号下降，而Φ的值_博增加。Φ _bo和n 的这些不寻常的温度波动可以根据 80-200 K 和 220-420 K 的双重高斯分布来合理化。对于高温和低温区域，评估I-V的这两个高斯分布Al/GO/p 型 Si 结构的平均势垒高度分别为 1.676 和 0.555 eV，标准偏差 ( σ ₀ ) 分别为 166 mV 和 76 mV。修正 ln(I ₀ /T ² )−(q ² σ _s ² )/(2k ² T² ) vs. q/(kT) 图，对应于这两个单独的温度区域，进一步证实了这些势垒高度值。理查森常数 ( A *)的值3.567 × 10 ^-6  A K ^-2 cm ^-2大大低于 p-Si 的已知值。然而，对于 220-420 K 区域的分布，48.069 A K ^-2 cm ^-2的理查森常数接近p 型 Si的已知理论值 32 A K ^-2 cm ^-2。