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A novel temperature sensor based on three-dimensional buried-gate graphene field effect transistor
Nanotechnology ( IF 2.9 ) Pub Date : 2021-09-07 , DOI: 10.1088/1361-6528/ac1f53
Yuan Fang 1 , Yang Zhang 1 , Yuning Li 1 , Jingye Sun 1 , Mingqiang Zhu 1 , Tao Deng 1
Affiliation  

Temperature sensor is one of the primarily developed and most proverbially utilized sensors. Owing to the limitations of their characteristics (stability, thermal conductivity, and thermal contact area), traditional temperature sensors may exhibit drawbacks of high production cost and large volume. In this paper, a three-dimensional (3D) buried-gate graphene field effect transistors (GFETs) are proposed as a novel sensor for temperature detection, which possess a 3D microtube structure by self-rolled-up technology. Compared to conventional two-dimensional (2D) devices, the 3D devices would have tinier area and higher integration. Two main reasons that would affect the resistance of the graphene are the graphene electro-phonon coupling and the thermal expansion effect. In addition, by applying the COMSOL Multiphysics software, it has been demonstrated that the microtube would deform to a certain extent when the temperature increases. And the strain on the 3D devices is proved to be greater than that of the 2D devices. Experimental results show that 3D GFETs could realize temperature detection between 30 C and 150 C, and its resistance increases with temperature rising. Furthermore, the maximum achieved temperature coefficient of resistance (TCR) is 0.41% C−1 and the hysteresis error is only 3.85%. By virtue of the 3D microtube, not only more superior temperature detection could be achieved, but also more devices are integrated in unit area. The 3D temperature sensor possesses superior sensitivity, repeatability and stability, which contributes a new approach to develop the high-performance temperature sensor.



中文翻译:

基于三维埋栅石墨烯场效应晶体管的新型温度传感器

温度传感器是主要开发和使用最多的传感器之一。由于其特性(稳定性、导热性和热接触面积)的限制,传统的温度传感器可能存在生产成本高、体积大的缺点。在本文中,提出了一种三维 (3D) 埋栅石墨烯场效应晶体管 (GFET) 作为一种用于温度检测的新型传感器,它通过自卷技术具有 3D 微管结构。与传统的二维 (2D) 设备相比,3D 设备将具有更小的面积和更高的集成度。影响石墨烯电阻的两个主要原因是石墨烯电声子耦合和热膨胀效应。此外,通过应用 COMSOL Multiphysics 软件,已经证明,当温度升高时,微管会发生一定程度的变形。事实证明,3D 设备上的应变大于 2D 设备上的应变。实验结果表明,3D GFETs可以实现30°C~150°C之间的温度检测,其电阻随温度升高而增加。此外,实现的最大电阻温度系数 (TCR) 为 0.41% C−1,滞后误差仅为 3.85%。凭借3D微管,不仅可以实现更优越的温度检测,而且在单位面积内集成了更多的设备。3D温度传感器具有优越的灵敏度、重复性和稳定性,为开发高性能温度传感器提供了一种新途径。

更新日期:2021-09-07
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