The spin–orbit torque (SOT) resulting from a spin current generated in a nonmagnetic transition metal layer offers a promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, in practice, materials with high SOT efficiencies are indispensable. Moreover, new materials need to be compatible with semiconductor processing. This study introduces W–Ta and W–V alloy layers between nonmagnetic β-W and ferromagnetic CoFeB layers in β-W/CoFeB/MgO/Ta heterostructures. We carry out first-principles band structure calculations for W–Ta and W–V alloy structures to estimate the spin Hall conductivity. While the predicted spin Hall conductivity values of W–Ta alloys decrease monotonically from −0.82 × 10³ S/cm for W₁₀₀ at% as the Ta concentration increases, those of W–V alloys increase to −1.98 × 10³ S/cm for W₇₅V₂₅ at% and then gradually decrease. Subsequently, we measure the spin Hall conductivities of both alloys. Experimentally, when β-W is alloyed with 20 at% V, the absolute value of the spin Hall conductivity considerably increases by 36% compared to that of the pristine β-W. We confirm that the W–V alloy also improves the SOT switching efficiency by approximately 40% compared to that of pristine β-W. This study demonstrates a new material that can act as a spin current-generating layer, leading to energy-efficient spintronic devices.

由非磁性过渡金属层中产生的自旋电流产生的自旋轨道扭矩 (SOT) 为自旋电子器件提供了一种很有前景的磁化转换机制。为了充分利用这种机制，在实践中，具有高 SOT 效率的材料是必不可少的。此外，新材料需要与半导体加工兼容。本研究在 β-W/CoFeB/MgO/Ta 异质结构中的非磁性 β-W 和铁磁性 CoFeB 层之间引入了 W-Ta 和 W-V 合金层。我们对 W-Ta 和 W-V 合金结构进行第一性原理能带结构计算，以估计自旋霍尔电导率。虽然 W-Ta 合金的预测自旋霍尔电导率值从 -0.82 × 10 ³  S/cm单调下降，W ₁₀₀at% 随着 Ta 浓度的增加，W-V 合金的那些增加到 -1.98 × 10 ³  S/cm 为 W ₇₅ V ₂₅ at% 然后逐渐减少。随后，我们测量了两种合金的自旋霍尔电导率。实验上，当 β-W 与 20 at% V 形成合金时，与原始 β-W 相比，自旋霍尔电导率的绝对值显着增加了 36%。我们证实，与原始 β-W 相比，W-V 合金还将 SOT 开关效率提高了约 40%。这项研究展示了一种新材料，它可以作为自旋电流产生层，从而产生节能的自旋电子器件。