An ultra-low power 8-Transistor Modified Gate Diffusion Input (MGDI) Carbon Nano Tube Field Effect Transistor (CNTFET) Full Adder (FA) has been presented in this paper. The proposed 8-T MGDI CNTFET Full Adder outperforms other adders in terms of Power Consumption, Propagation Delay and the PDP at different levels of Power Supply and Temperatures. The power consumption of the proposed 10 nm CNTFET 8-T MGDI Full Adder at 27°C is 1.96 nW. The proposed CNTFET FA exhibits 60.32% improvement in Power Consumption when compared to the existing 10 nm FINFET 8-T MGDI Full Adder. The propagation Delay of the proposed FA is 42.16 ps and an improvement of 57.68% is noticed over the existing FA. The Power Delay Product of the proposed 10 nm CNTFET 8-T MGDI FA is 82.63 × 10⁻²¹ Jules, whereas the PDP of the 10 nm FINFET 8-T MGDI FA is 492.07 × 10⁻²¹ Jules. The PDP of the proposed 10 nm CNTFET 8-T MGDI Full Adder exhibits 83.21% improvement when compared to the 10 nm FINFET 8-T MGDI FA.

本文提出了一种超低功耗 8 晶体管改进栅极扩散输入 (MGDI) 碳纳米管场效应晶体管 (CNTFET) 全加器 (FA)。所提出的 8-T MGDI CNTFET 全加器在不同电源和温度水平下的功耗、传播延迟和 PDP 方面优于其他加法器。所提议的 10 nm CNTFET 8-T MGDI 全加器在 27°C 时的功耗为 1.96 nW。与现有的 10 nm FINFET 8-T MGDI 全加器相比，所提出的 CNTFET FA 的功耗提高了 60.32%。所提出的 FA 的传播延迟为 42.16 ps，比现有 FA 提高了 57.68%。所提出的 10 nm CNTFET 8-T MGDI FA 的功率延迟积为 82.63 × 10 ^-21Jules，而10 nm FINFET 8-T MGDI FA 的 PDP 为 492.07 × 10 ^-21 Jules。与 10 nm FINFET 8-T MGDI FA 相比，所提出的 10 nm CNTFET 8-T MGDI 全加器的 PDP 提高了 83.21%。