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Enhancing the Switching Performance of CH3NH3PbI3 Memristors by the Control of Size and Characterization Parameters
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-08-20 , DOI: 10.1002/aelm.202100472 Himangshu Jyoti Gogoi 1 , Arun Tej Mallajosyula 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-08-20 , DOI: 10.1002/aelm.202100472 Himangshu Jyoti Gogoi 1 , Arun Tej Mallajosyula 1
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This paper analyzes the effects of scaling and measurement conditions on the performance of hybrid organic inorganic perovskite (HOIP) devices having bipolar resistive switching characteristics. Electroforming voltage, SET current, and ON/OFF ratios are found to be area dependent. Linear voltage sweep and pulse voltage characterization showed that parameters such as compliance current, voltage scan rate, pulse width, amplitude, and frequency significantly alter the device switching parameters. The CH3NH3PbI3 memristors fabricated has FORMING, SET, and RESET voltages of 1.18, 0.17, and −0.13 V, respectively, along with an ON/OFF ratio of 1.3 × 103. It has been found that, both the RESET voltage and current significantly increase with scan rate, whereas the ON/OFF ratio increases significantly with compliance current. In case of voltage pulse characterization, the ON/OFF ratio can be enhanced by increasing the pulse amplitude and width. Additionally, the experimental data fitting to a SPICE based analytical model establishes that the HOIP memristor current conduction is dominated by tunneling process in the OFF state and is ohmic in the ON state. Based on the results, the authors arrive at a general protocol that can be used to characterize memristors made of HOIPs and other related materials such that they can operate optimally.
中文翻译：
通过控制尺寸和表征参数提高 CH3NH3PbI3 忆阻器的开关性能
本文分析了缩放和测量条件对具有双极电阻开关特性的混合有机无机钙钛矿 (HOIP) 器件性能的影响。发现电铸电压、设置电流和开/关比与面积有关。线性电压扫描和脉冲电压特性表明，顺从电流、电压扫描速率、脉冲宽度、幅度和频率等参数会显着改变器件的开关参数。制造的 CH 3 NH 3 PbI 3忆阻器的成形、设置和复位电压分别为 1.18、0.17 和 -0.13 V，开/关比为 1.3 × 10 3. 已经发现，RESET 电压和电流都随着扫描速率显着增加，而 ON/OFF 比随着顺从电流显着增加。在电压脉冲表征的情况下，可以通过增加脉冲幅度和宽度来提高开/关比。此外，拟合基于 SPICE 的分析模型的实验数据表明，HOIP 忆阻器电流传导在 OFF 状态下由隧道过程主导，在 ON 状态下为欧姆。基于这些结果，作者得出了一个通用协议，该协议可用于表征由 HOIP 和其他相关材料制成的忆阻器，以便它们能够以最佳方式运行。
更新日期：2021-08-20
中文翻译：
通过控制尺寸和表征参数提高 CH3NH3PbI3 忆阻器的开关性能
本文分析了缩放和测量条件对具有双极电阻开关特性的混合有机无机钙钛矿 (HOIP) 器件性能的影响。发现电铸电压、设置电流和开/关比与面积有关。线性电压扫描和脉冲电压特性表明，顺从电流、电压扫描速率、脉冲宽度、幅度和频率等参数会显着改变器件的开关参数。制造的 CH 3 NH 3 PbI 3忆阻器的成形、设置和复位电压分别为 1.18、0.17 和 -0.13 V，开/关比为 1.3 × 10 3. 已经发现，RESET 电压和电流都随着扫描速率显着增加，而 ON/OFF 比随着顺从电流显着增加。在电压脉冲表征的情况下，可以通过增加脉冲幅度和宽度来提高开/关比。此外，拟合基于 SPICE 的分析模型的实验数据表明，HOIP 忆阻器电流传导在 OFF 状态下由隧道过程主导，在 ON 状态下为欧姆。基于这些结果，作者得出了一个通用协议，该协议可用于表征由 HOIP 和其他相关材料制成的忆阻器，以便它们能够以最佳方式运行。
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