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In Memory Energy Application for Resistive Random Access Memory
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-08-19 , DOI: 10.1002/aelm.202100297
Paola Trotti 1 , Sami Oukassi 1 , Gabriel Molas 1 , Mathieu Bernard 1 , François Aussenac 1 , Gaël Pillonnet 1
Affiliation  

This work explores the innovative concept of a hybrid dual-behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as next-generation memory, thanks to its promising performances in terms of scalability and CMOS process compatibility. Its working mechanisms, based on faradaic processes, motivate the study on the feasibility of operating RRAM also as energy storage element. To evaluate the energy capability, various electrochemical characterizations on state-of-the-art RRAM are presented. The highly resistive electrolyte, extremely small physical scale (nm), and current range (pA), put in quite a critical framework, far from conventional solid-state batteries. Cyclic voltammetry tests reveal that although no oxidation peak appears during the redox cycle, the cells behave as standard electrochemical storage elements when investigating the impact of the scan rate, maximum positive voltage, and area on the reduction peak. Concentration and diffusion coefficients are derived, in the order of 10−12 cm2 s−1 and few mmol cm−3, respectively, while energy storage capability amounts to 3.5 pJ µm−2. Finally, design concepts are proposed, where RRAM “in-memory energy” technology would be a newfangled approach to meet the needs of various emerging and standard applications.

中文翻译:

在电阻式随机存取存储器的存储器能量应用中

这项工作探索了基于新兴非易失性存储器技术的混合双行为设备的创新概念,用于数据保留和能量存储。RRAM(电阻式随机存取存储器)被认为是下一代存储器的主要候选者,这要归功于其在可扩展性和 CMOS 工艺兼容性方面的良好性能。其基于法拉第过程的工作机制激发了对将 RRAM 也用作储能元件的可行性的研究。为了评估能量容量,介绍了最先进的 RRAM 上的各种电化学特性。高电阻电解质、极小的物理尺度 (nm) 和电流范围 (pA) 构成了一个非常关键的框架,与传统的固态电池相去甚远。循环伏安法测试表明,虽然在氧化还原循环期间没有出现氧化峰,但在研究扫描速率、最大正电压和还原峰面积的影响时,电池表现为标准电化学存储元件。导出浓度和扩散系数,数量级为 10-12 cm 2 s -1和几毫摩尔 cm -3,而能量存储能力达到3.5 pJ µm -2。最后,提出了设计概念,其中 RRAM“内存中能量”技术将是一种满足各种新兴和标准应用需求的新奇方法。
更新日期:2021-08-19
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