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Thermal Influence Coefficients-Based Electrothermal Modeling Approach for Power Electronics
IEEE Transactions on Components, Packaging and Manufacturing Technology ( IF 2.3 ) Pub Date : 2021-07-09 , DOI: 10.1109/tcpmt.2021.3096073
G. Ghaisas , S. Krishnan

An inverter or converter achieves the desired dc-ac or dc-dc conversion as required by electric and hybrid electric vehicles. This conversion is typically performed using semiconductor switches such as Insulated Gate Bipolar Transistors (IGBTs) modules consisting of transistors and diodes. Multiple transistors-diode pairs are integrated under a common copper base plate (also referred to as case). As power density increases, the heat dissipation of each device is influenced by other devices. The heat loss from semiconductor devices needs to be effectively dissipated to the ambient to maintain the temperature of IGBTs and diodes within acceptable limits (mentioned by the component manufacturer or based on the desired thermal margin in design). The over-temperature of the IGBT junction causes reliability issues resulting in solder fatigue and bond wire wear-out. The current work comprises predicting the temperature-dependent heat loss (electrothermal modeling) and thermal management techniques to dissipate these losses effectively to the ambient. An influence coefficient matrix is defined for liquid-cooled IGBT modules and used to estimate the die-to-die thermal influence. The IGBT module's heat distribution and its effect on the die temperature are studied for dc-dc and dc-three phase ac conversion.

中文翻译:


基于热影响系数的电力电子电热建模方法



逆变器或转换器可实现电动和混合动力电动汽车所需的直流-交流或直流-直流转换。这种转换通常使用半导体开关来执行,例如由晶体管和二极管组成的绝缘栅双极晶体管 (IGBT) 模块。多个晶体管-二极管对集成在公共铜基板(也称为外壳)下。随着功率密度的增加,每个器件的散热都会受到其他器件的影响。半导体器件的热损失需要有效地消散到环境中,以将 IGBT 和二极管的温度保持在可接受的限度内(由组件制造商提及或基于设计中所需的热裕度)。 IGBT 结的温度过高会导致可靠性问题,从而导致焊接疲劳和键合线磨损。当前的工作包括预测与温度相关的热损失(电热建模)和热管理技术,以有效地将这些损失消散到环境中。为液冷 IGBT 模块定义了影响系数矩阵,用于估计芯片间的热影响。针对 DC-DC 和 DC-三相 AC 转换,研究了 IGBT 模块的热分布及其对芯片温度的影响。
更新日期:2021-07-09
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