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High-G Shock Reliability of 3-D Integrated Structure Microsystem Based on Finite Element Simulation
IEEE Transactions on Components, Packaging and Manufacturing Technology ( IF 2.2 ) Pub Date : 2021-07-05 , DOI: 10.1109/tcpmt.2021.3094594 Yangtao Long , Ziye Di , Chenhao Lu , Wenya Tian , Long Dou , Zhong Jin , Jinqing Xiao , Junhui Li
IEEE Transactions on Components, Packaging and Manufacturing Technology ( IF 2.2 ) Pub Date : 2021-07-05 , DOI: 10.1109/tcpmt.2021.3094594 Yangtao Long , Ziye Di , Chenhao Lu , Wenya Tian , Long Dou , Zhong Jin , Jinqing Xiao , Junhui Li
In order to understand high-G shock reliability of the 3-D integrated structure microsystem (3-D-ISM), it is studied by the finite element method (FEM). First, a numerical model of the 3-D-ISM is established for simulation. Then, appropriate elements are used to discretize the geometry, and certain initial and boundary conditions are enforced. Acceleration up to 20000 G is applied to the high-G shock simulation process. The simulation results showed that the filler can significantly improve the high-G shock reliability of the 3-D-ISM. And by filling with the filler, the 3-D-ISM under different loading types and different substrates can meet the strength requirement after being subjected to the high-G shock. This study could provide reliability prediction for the designed 3-D-ISM.
中文翻译:
基于有限元仿真的 3D 集成结构微系统的高 G 冲击可靠性
为了了解 3-D 集成结构微系统 (3-D-ISM) 的高 G 冲击可靠性,通过有限元方法 (FEM) 对其进行了研究。首先,建立 3-D-ISM 的数值模型进行仿真。然后,使用适当的元素来离散化几何图形,并强制执行某些初始和边界条件。高达 20000 G 的加速度应用于高 G 冲击模拟过程。仿真结果表明,填料可以显着提高 3-D-ISM 的高 G 冲击可靠性。并且通过填充填充物,3-D-ISM在不同负载类型和不同基材下经受高G冲击后可以满足强度要求。这项研究可以为设计的 3-D-ISM 提供可靠性预测。
更新日期:2021-08-20
中文翻译:
![](https://static.x-mol.com/jcss/images/paperTranslation.png)
基于有限元仿真的 3D 集成结构微系统的高 G 冲击可靠性
为了了解 3-D 集成结构微系统 (3-D-ISM) 的高 G 冲击可靠性,通过有限元方法 (FEM) 对其进行了研究。首先,建立 3-D-ISM 的数值模型进行仿真。然后,使用适当的元素来离散化几何图形,并强制执行某些初始和边界条件。高达 20000 G 的加速度应用于高 G 冲击模拟过程。仿真结果表明,填料可以显着提高 3-D-ISM 的高 G 冲击可靠性。并且通过填充填充物,3-D-ISM在不同负载类型和不同基材下经受高G冲击后可以满足强度要求。这项研究可以为设计的 3-D-ISM 提供可靠性预测。