In order to understand high-G shock reliability of the 3-D integrated structure microsystem (3-D-ISM), it is studied by the finite element method (FEM). First, a numerical model of the 3-D-ISM is established for simulation. Then, appropriate elements are used to discretize the geometry, and certain initial and boundary conditions are enforced. Acceleration up to 20000 G is applied to the high-G shock simulation process. The simulation results showed that the filler can significantly improve the high-G shock reliability of the 3-D-ISM. And by filling with the filler, the 3-D-ISM under different loading types and different substrates can meet the strength requirement after being subjected to the high-G shock. This study could provide reliability prediction for the designed 3-D-ISM.

中文翻译：

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基于有限元仿真的 3D 集成结构微系统的高 G 冲击可靠性

为了了解 3-D 集成结构微系统 (3-D-ISM) 的高 G 冲击可靠性，通过有限元方法 (FEM) 对其进行了研究。首先，建立 3-D-ISM 的数值模型进行仿真。然后，使用适当的元素来离散化几何图形，并强制执行某些初始和边界条件。高达 20000 G 的加速度应用于高 G 冲击模拟过程。仿真结果表明，填料可以显着提高 3-D-ISM 的高 G 冲击可靠性。并且通过填充填充物，3-D-ISM在不同负载类型和不同基材下经受高G冲击后可以满足强度要求。这项研究可以为设计的 3-D-ISM 提供可靠性预测。