The technology of inverse current commutation with semiconductors (ICCOS) has the ability to reliably commutate high current, which has been demonstrated in related literature. By applying the ICCOS technology to a repetitive inductive pulsed power supply (IPPS), an improved IPPS circuit was presented in our previous work. In the improved circuit, a thyristor replaces the insulated gate bipolar transistor (IGBT) of the previous circuit as the main switch, and a bridge current commutation unit acts as the ICCOS branch. The capacitor voltage in ICCOS has the ability of self-recovery, which adapts to the continuous operation of IPPS. To make the improved IPPS circuit obtain higher performance, the influence of some key circuit parameters is studied in this paper by numerical calculation. It can be concluded that the voltage of the main switch and the ratio of capacitive energy storage can be reduced, the recovery rate of residual energy can be increased, and the residual energy recovery time can be shorten by improving the capacitance C, inductance ratio L2/(L2 + LL), inductance L2 and coupling coefficient k. Finally, the preliminary experimental results under various capacitance are presented, which confirms the validity of the numerical calculation.

中文翻译：

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关键参数对 ICCOS 改进重复 IPPS 性能的影响


半导体逆流换向技术（ICCOS）具有可靠地换向大电流的能力，这一点已在相关文献中得到证明。通过将 ICCOS 技术应用于重复感应脉冲电源（IPPS），我们在之前的工作中提出了一种改进的 IPPS 电路。改进电路中，晶闸管代替原电路中的绝缘栅双极型晶体管(IGBT)作为主开关，桥式电流换流单元作为ICCOS支路。 ICCOS中的电容电压具有自恢复能力，适应IPPS的连续工作。为了使改进后的IPPS电路获得更高的性能，本文通过数值计算研究了一些关键电路参数的影响。由此可见，通过提高电容C、电感比L2，可以降低主开关管电压和电容储能比例，提高剩余能量回收率，缩短剩余能量回收时间。 /(L2 + LL)、电感L2和耦合系数k。最后给出了不同电容下的初步实验结果，证实了数值计算的有效性。